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公开(公告)号:US20170359041A1
公开(公告)日:2017-12-14
申请号:US15178217
申请日:2016-06-09
Applicant: Analog Devices Global
Inventor: Sean T. Morley
CPC classification number: H03F3/45273 , H03F1/3211 , H03F3/19 , H03F3/193 , H03F3/195 , H03F3/21 , H03F3/3016 , H03F3/45071 , H03F3/4508 , H03F3/45085 , H03F3/45174 , H03F3/45183 , H03F3/50 , H03F2200/165 , H03F2200/451 , H03F2200/456 , H03F2200/513 , H03F2200/69 , H03F2200/72 , H03F2200/75 , H03F2203/45112 , H03F2203/45646
Abstract: Provided herein are amplifiers, such as buffers, with increased headroom. An amplifier stage includes a follower transistor and current source configured to receive a power supply voltage comprising an alternating current component and a direct current component. The alternating current component of the power supply voltage has substantially the same frequency and magnitude as the input signal received by the follower transistor. In radio frequency (RF) and intermediate frequency (IF) buffer applications, for example, the increased headroom can allow for linear buffering of an input signals with increased amplitude so that the output power one decibel (OP1dB) compression point can be increased.
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公开(公告)号:US10063199B2
公开(公告)日:2018-08-28
申请号:US15178217
申请日:2016-06-09
Applicant: Analog Devices Global
Inventor: Sean T. Morley
CPC classification number: H03F3/45273 , H03F1/3211 , H03F3/19 , H03F3/193 , H03F3/195 , H03F3/21 , H03F3/3016 , H03F3/45071 , H03F3/4508 , H03F3/45085 , H03F3/45174 , H03F3/45183 , H03F3/50 , H03F2200/165 , H03F2200/451 , H03F2200/456 , H03F2200/513 , H03F2200/69 , H03F2200/72 , H03F2200/75 , H03F2203/45112 , H03F2203/45646
Abstract: Provided herein are amplifiers, such as buffers, with increased headroom. An amplifier stage includes a follower transistor and current source configured to receive a power supply voltage comprising an alternating current component and a direct current component. The alternating current component of the power supply voltage has substantially the same frequency and magnitude as the input signal received by the follower transistor. In radio frequency (RF) and intermediate frequency (IF) buffer applications, for example, the increased headroom can allow for linear buffering of an input signals with increased amplitude so that the output power one decibel (OP1dB) compression point can be increased.
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