公开(公告)号：US20200059228A1

公开(公告)日：2020-02-20

申请号：US16238338

申请日：2019-01-02

Applicant: Analog Devices Global Unlimited Company

Inventor： Srivatsan Parthasarathy ,  Sirui Luo ,  Thomas Paul Kearney ,  Yuanzhong Zhou ,  Donal Bourke ,  Jean-Jacques Hajjar

IPC: H03K17/081 ,  H03K17/0412

Abstract: Fault tolerant switches are provided herein. In certain embodiments, a fault tolerant switch includes a switch, a gate driver, and a clamp. The switch includes a switch p-type field effect transistor (PFET) and a switch n-type field effect transistor (NFET) electrically connected in series and controlled by the gate driver. Additionally, the clamp is electrically connected in parallel with the switch, and includes a forward protection circuit including a first diode and a first clamp FET in series, and a reverse protection circuit including a second diode and a second clamp FET in series. The clamp further includes a first gate bias circuit configured to bias a gate of the first clamp FET and a second gate bias circuit configured to bias a gate of the second clamp FET.

公开(公告)号：US10529518B2

公开(公告)日：2020-01-07

申请号：US15269086

申请日：2016-09-19

Applicant: Analog Devices Global

Inventor： Padraig Liam Fitzgerald ,  Srivatsan Parthasarathy ,  Javier A. Salcedo

IPC: H02H9/00 ,  H01H59/00 ,  H01L27/02 ,  H01L23/31 ,  H02H9/04 ,  B81C1/00 ,  H01L27/12 ,  H01L23/495

Abstract: Micro-electromechanical switch (MEMS) devices can be fabricated using integrated circuit fabrication techniques and materials. Such switch devices can provide cycle life and insertion loss performance suiting for use in a broad range of applications including, for example, automated test equipment (ATE), switching for measurement instrumentation (such as a spectrum analyzer, network analyzer, or communication test system), and uses in communication systems, such as for signal processing. MEMS devices can be vulnerable to electrical over-stress, such as associated with electrostatic discharge (ESD) transient events. A solid-state clamp circuit can be incorporated in a MEMS device package to protect one or more MEMS devices from damaging overvoltage conditions. The clamp circuit can include single or multiple blocking junction structures having complementary current-voltage relationships, such as to help linearize a capacitance-to-voltage relationship presented by the clamp circuit.

公开(公告)号：US10581423B1

公开(公告)日：2020-03-03

申请号：US16238338

申请日：2019-01-02

Applicant: Analog Devices Global Unlimited Company

Inventor： Srivatsan Parthasarathy ,  Sirui Luo ,  Thomas Paul Kearney ,  Yuanzhong Zhou ,  Donal Bourke ,  Jean-Jacques Hajjar

IPC: H01L27/02 ,  H02H9/00 ,  H03K17/081 ,  H03K17/0412

Abstract: Fault tolerant switches are provided herein. In certain embodiments, a fault tolerant switch includes a switch, a gate driver, and a clamp. The switch includes a switch p-type field effect transistor (PFET) and a switch n-type field effect transistor (NFET) electrically connected in series and controlled by the gate driver. Additionally, the clamp is electrically connected in parallel with the switch, and includes a forward protection circuit including a first diode and a first clamp FET in series, and a reverse protection circuit including a second diode and a second clamp FET in series. The clamp further includes a first gate bias circuit configured to bias a gate of the first clamp FET and a second gate bias circuit configured to bias a gate of the second clamp FET.

公开(公告)号：US20180083439A1

公开(公告)日：2018-03-22

申请号：US15269086

申请日：2016-09-19

Applicant: Analog Devices Global

Inventor： Padraig Liam Fitzgerald ,  Srivatsan Parthasarathy ,  Javier A. Salcedo

IPC: H02H9/04 ,  H01L27/02 ,  H01L27/12 ,  H01L23/528 ,  H01L23/04 ,  H01L21/84 ,  H01H59/00 ,  H01H49/00

CPC classification number: H01H59/0009 ,  B81C1/0023 ,  B81C1/00246 ,  B81C2203/0735 ,  H01L23/3107 ,  H01L23/49541 ,  H01L27/0255 ,  H01L27/0262 ,  H01L27/1203 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/19105 ,  H02H9/041 ,  H02H9/046 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Micro-electromechanical switch (MEMS) devices can be fabricated using integrated circuit fabrication techniques and materials. Such switch devices can provide cycle life and insertion loss performance suiting for use in a broad range of applications including, for example, automated test equipment (ATE), switching for measurement instrumentation (such as a spectrum analyzer, network analyzer, or communication test system), and uses in communication systems, such as for signal processing. MEMS devices can be vulnerable to electrical over-stress, such as associated with electrostatic discharge (ESD) transient events. A solid-state clamp circuit can be incorporated in a MEMS device package to protect one or more MEMS devices from damaging overvoltage conditions. The clamp circuit can include single or multiple blocking junction structures having complementary current-voltage relationships, such as to help linearize a capacitance-to-voltage relationship presented by the clamp circuit.