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公开(公告)号：US20220337055A1
公开(公告)日：2022-10-20
申请号：US17810112
申请日：2022-06-30
IPC分类号： H02H9/04 , H01L27/02 , H02H11/00 , H01L29/08 , H01L29/739
摘要： Electrical overstress protection for high speed interfaces are disclosed. In certain embodiments, a semiconductor die with bidirectional protection against electrical overstress is provided. The semiconductor die includes a first pad, a second pad, a forward protection silicon controlled rectifier (SCR) electrically connected between the first pad and the second pad and configured to activate in response to electrical overstress that increases a voltage of the first pad relative to a voltage of the second pad, and a reverse protection SCR electrically connected in parallel with the forward protection SCR between the first pad and the second pad and configured to activate in response to electrical overstress that decreases the voltage of the first pad relative to the voltage of the second pad.
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公开(公告)号：US20200350875A1
公开(公告)日：2020-11-05
申请号：US16840097
申请日：2020-04-03
IPC分类号： H03F1/52 , H03F1/02 , H01L29/205 , H01L29/872 , H01L27/06 , H01L29/778 , H01L29/20 , H03F3/195 , H01L27/02
摘要： Microwave amplifiers tolerant to electrical overstress are provided. In certain embodiments, a monolithic microwave integrated circuit (MMIC) includes a signal pad that receives a radio frequency (RF) signal, a ground pad, a balun including a primary section that receives the RF signal and a secondary section that outputs a differential RF signal, an amplifier that amplifies the differential RF signal, and a plurality of decoupling elements, some of them electrically connected between the primary section and the ground pad, others electrically connected in the secondary section to a plurality of the amplifier's nodes, and operable to protect the amplifier from electrical overstress. Such electrical overstress events can include electrostatic discharge (ESD) events, such as field-induced charged-device model (FICDM) events, as well as other types of overstress conditions.
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公开(公告)号：US20200287530A1
公开(公告)日：2020-09-10
申请号：US16295447
申请日：2019-03-07
发明人： Chiong Yew Lai , Javier A. Salcedo
IPC分类号： H03K17/0812
摘要： A plurality of lower voltage metal oxide semiconductor sensors are integrated and distributed in various parts of a power MOSFET to provide over temperature protection. The sensors are sensitive to temperatures of the various parts of the power MOSFET and configured to regulate the power MOSFET when a trip temperature is reached by reducing the operation of the MOSFET. A bias network is configured to set the trip temperature. In some configurations, a threshold voltage is used to monitor and control the maximum temperature.
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4.发明申请公开(公告)号：US20200227914A1
公开(公告)日：2020-07-16
申请号：US16291352
申请日：2019-03-04
IPC分类号： H02H9/04 , H01L29/739 , H01L29/08 , H01L27/02 , H02H11/00
摘要： High voltage tolerant electrical overstress protection with low leakage current and low capacitance is provided. In one embodiment, a semiconductor die includes a signal pad, an internal circuit electrically connected to the signal pad, a power clamp electrically connected to an isolated node, and one or more isolation blocking voltage devices electrically connected between the signal pad and the isolated node. The one or more isolation blocking voltage devices are operable to isolate the signal pad from a capacitance of the power clamp. In another embodiment, a semiconductor die includes a signal pad, a ground pad, a high voltage/high speed internal circuit electrically connected to the signal pad, and a first thyristor and a second thyristor between the signal pad and the ground pad.
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公开(公告)号：US12068721B2
公开(公告)日：2024-08-20
申请号：US17930172
申请日：2022-09-07
IPC分类号： H01L27/02 , H01L27/06 , H01L29/20 , H01L29/205 , H01L29/778 , H01L29/872 , H03F1/02 , H03F1/52 , H03F3/195
CPC分类号： H03F1/523 , H01L27/0288 , H01L27/0629 , H01L29/2003 , H01L29/205 , H01L29/7786 , H01L29/872 , H03F1/0211 , H03F3/195 , H03F2200/06 , H03F2200/294 , H03F2200/426 , H03F2200/451
摘要： Monolithic microwave integrated circuits (MMICs) tolerant to electrical overstress are provided. In certain embodiments, a MMIC includes a signal pad that receives a radio frequency (RF) signal, and an RF circuit coupled to the RF signal pad. The RF circuit includes a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers. The MMIC is tolerant to electrical overstress events, such as field-induced charged-device model (FICDM) events.
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公开(公告)号：US11784488B2
公开(公告)日：2023-10-10
申请号：US17810112
申请日：2022-06-30
IPC分类号： H02H9/04 , H01L29/739 , H01L29/08 , H02H11/00 , H01L27/02
CPC分类号： H02H9/046 , H01L27/0255 , H01L27/0262 , H01L29/0834 , H01L29/0839 , H01L29/7391 , H02H11/002
摘要： Electrical overstress protection for high speed interfaces are disclosed. In certain embodiments, a semiconductor die with bidirectional protection against electrical overstress is provided. The semiconductor die includes a first pad, a second pad, a forward protection silicon controlled rectifier (SCR) electrically connected between the first pad and the second pad and configured to activate in response to electrical overstress that increases a voltage of the first pad relative to a voltage of the second pad, and a reverse protection SCR electrically connected in parallel with the forward protection SCR between the first pad and the second pad and configured to activate in response to electrical overstress that decreases the voltage of the first pad relative to the voltage of the second pad.
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公开(公告)号：US20220416731A1
公开(公告)日：2022-12-29
申请号：US17930172
申请日：2022-09-07
IPC分类号： H03F1/52 , H03F1/02 , H01L29/205 , H01L29/872 , H01L27/06 , H01L29/778 , H03F3/195 , H01L27/02 , H01L29/20
摘要： Monolithic microwave integrated circuits (MMICs) tolerant to electrical overstress are provided. In certain embodiments, a MMIC includes a signal pad that receives a radio frequency (RF) signal, and an RF circuit coupled to the RF signal pad. The RF circuit includes a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers. The MMIC is tolerant to electrical overstress events, such as field-induced charged-device model (FICDM) events.
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公开(公告)号：US11469717B2
公开(公告)日：2022-10-11
申请号：US16840097
申请日：2020-04-03
IPC分类号： H03F1/52 , H03F1/02 , H01L29/205 , H01L29/872 , H01L27/06 , H01L29/778 , H03F3/195 , H01L27/02 , H01L29/20
摘要： Microwave amplifiers tolerant to electrical overstress are provided. In certain embodiments, a monolithic microwave integrated circuit (MMIC) includes a signal pad that receives a radio frequency (RF) signal, a ground pad, a balun including a primary section that receives the RF signal and a secondary section that outputs a differential RF signal, an amplifier that amplifies the differential RF signal, and a plurality of decoupling elements, some of them electrically connected between the primary section and the ground pad, others electrically connected in the secondary section to a plurality of the amplifier's nodes, and operable to protect the amplifier from electrical overstress. Such electrical overstress events can include electrostatic discharge (ESD) events, such as field-induced charged-device model (FICDM) events, as well as other types of overstress conditions.
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公开(公告)号：US11387648B2
公开(公告)日：2022-07-12
申请号：US16291352
申请日：2019-03-04
IPC分类号： H02H9/04 , H01L27/02 , H01L29/739 , H01L29/08 , H02H11/00
摘要： High voltage tolerant electrical overstress protection with low leakage current and low capacitance is provided. In one embodiment, a semiconductor die includes a signal pad, an internal circuit electrically connected to the signal pad, a power clamp electrically connected to an isolated node, and one or more isolation blocking voltage devices electrically connected between the signal pad and the isolated node. The one or more isolation blocking voltage devices are operable to isolate the signal pad from a capacitance of the power clamp. In another embodiment, a semiconductor die includes a signal pad, a ground pad, a high voltage/high speed internal circuit electrically connected to the signal pad, and a first thyristor and a second thyristor between the signal pad and the ground pad.
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公开(公告)号：US10833668B2
公开(公告)日：2020-11-10
申请号：US16295447
申请日：2019-03-07
发明人： Chiong Yew Lai , Javier A. Salcedo
IPC分类号： H03K17/0812 , H03K17/08
摘要： A plurality of lower voltage metal oxide semiconductor sensors are integrated and distributed in various parts of a power MOSFET to provide over temperature protection. The sensors are sensitive to temperatures of the various parts of the power MOSFET and configured to regulate the power MOSFET when a trip temperature is reached by reducing the operation of the MOSFET. A bias network is configured to set the trip temperature. In some configurations, a threshold voltage is used to monitor and control the maximum temperature.
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