摘要:
The present invention refers to a sensor (10) for sensing an intensity of an electron beam generated by an electron beam generator along a path, the electron beam being exited from the generator through an exit window (24). The invention is characterized in that the sensor (10) comprises a conductor (26) located within the path and exposed to the exit window (24), and an insulating housing (28) for shielding the conductor (26), said housing (28) being engaged with the exit window (24) forming a chamber (30) with said exit window (24), and that the conductor (26) is positioned within said chamber (30). The invention also refers to a system for sensing an intensity of an electron beam.
摘要:
A detector is disclosed for sensing an intensity of an electron beam generated along a path. An exemplary detector includes an exposed conductor attached to a support which is configured to locate the exposed conductor within a path of an electron beam; a grounded conductor isolated from the exposed conductor, the grounded conductor partly surrounding the exposed conductor to form a plasma shield having a window positioned at least in a direction of the electron beam path.
摘要:
A detector and method are disclosed for sensing an intensity of an electron beam. An exemplary detector includes a multilayer composite structure having a conductive core, an insulating layer formed on the conductive core, and an outer conductive layer electrically connected to a voltage potential and formed on the insulating layer. A support is configured to locate the conductive core in alignment with an electron beam generator, between an electron beam generator and a target area, and within a direct path of an electron beam to be generated by the electron beam generator.
摘要:
A sensor is adapted to sense the intensity of an electron beam generated by an electron beam generator and exited from the generator through an exit window along a path towards a target within a target area. The sensor comprises at least one area of at least one conductive layer located within the path and connected to a current detector. The area, or areas, of the at least one conductive layer are shielded from the surrounding environment and from the exit window (and from one another when there are more than one area) by a shield. The shield is formed on the exit window. The sensor forms a part of a sensing system.
摘要:
The present invention refers to a sensor (10) for sensing an intensity of an electron beam generated by an electron beam generator along a path, the electron beam being exited from the generator through an exit window (24). The invention is characterized in that the sensor (10) comprises a conductor (26) located within the path and exposed to the exit window (24), and an insulating housing (28) for shielding the conductor (26), said housing (28) being engaged with the exit window (24) forming a chamber (30) with said exit window (24), and that the conductor (26) is positioned within said chamber (30). The invention also refers to a system for sensing an intensity of an electron beam.
摘要:
A detector is disclosed for sensing an intensity of an electron beam generated along a path. An exemplary detector includes an exposed conductor attached to a support which is configured to locate the exposed conductor within a path of an electron beam; a grounded conductor isolated from the exposed conductor, the grounded conductor partly surrounding the exposed conductor to form a plasma shield having a window positioned at least in a direction of the electron beam path.
摘要:
A detector and method are disclosed for sensing an intensity of an electron beam. An exemplary detector includes a multilayer composite structure having a conductive core, an insulating layer formed on the conductive core, and an outer conductive layer electrically connected to a voltage potential and formed on the insulating layer. A support is configured to locate the conductive core in alignment with an electron beam generator, between an electron beam generator and a target area, and within a direct path of an electron beam to be generated by the electron beam generator.
摘要:
A sensor is adapted to sense the intensity of an electron beam generated by an electron beam generator and exited from the generator through an exit window along a path towards a target within a target area. The sensor comprises at least one area of at least one conductive layer located within the path and connected to a current detector. The area, or areas, of the at least one conductive layer are shielded from the surrounding environment and from the exit window (and from one another when there are more than one area) by a shield. The shield is formed on the exit window. The sensor forms a part of a sensing system.
摘要:
A method and a device for detecting defects in a packaging laminate having at least one conductive layer are provided. The method comprises the steps of grounding the conductive layer of the packaging laminate, arranging an electrode adjacent to the packaging laminate, applying a high voltage to the electrode by ramping the voltage from an initial value towards an upper predetermined value, and detecting a defect in the packaging material by registering dielectric breakdown between the electrode and the conductive layer of the packaging laminate.
摘要:
The invention relates to measurement of a fluid flow, wherein a flow rate component of the fluid is measured along a selected direction. A magnetic field whose polarity varies over time is applied to the fluid, which presumed to contain electrically charged elements. First and second sensor electrodes (120, 121) are arranged to be wetted by the flowing fluid. The electrodes (120, 121) are spaced apart from one another along a line being substantially perpendicular both to the selected flow direction and a magnetic axis of the magnetic field. A DC-level drift of the sensor electrodes (120, 121) is prevented by supplying a control current (Ictrl-0; Ictrl-1) to each of the sensor electrode (120, 121), which has such sign and magnitude that a direct-current voltage level at the sensor electrodes (120, 121) relative areference potential is controled towards a predetermined voltage (DCset).