公开(公告)号：US20120206127A1

公开(公告)日：2012-08-16

申请号：US13456122

申请日：2012-04-25

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： G01R19/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

摘要翻译： 提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。 一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。 在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。 每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。 产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压 信号和脉冲RF偏置电压信号的期望电压值。

公开(公告)号：US20130050892A1

公开(公告)日：2013-02-28

申请号：US13663393

申请日：2012-10-29

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/683

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

摘要翻译： 提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。 一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。 在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。 每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。 产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压 信号和脉冲RF偏置电压信号的期望电压值。

公开(公告)号：US08192576B2

公开(公告)日：2012-06-05

申请号：US11805607

申请日：2007-05-23

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

摘要翻译： 提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。 等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。 电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。 提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。 采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置 以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。 还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

公开(公告)号：US08303763B2

公开(公告)日：2012-11-06

申请号：US13456122

申请日：2012-04-25

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

摘要翻译： 提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。 一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。 在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。 每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。 产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压 信号和脉冲RF偏置电压信号的期望电压值。

公开(公告)号：US20100315064A1

公开(公告)日：2010-12-16

申请号：US11805607

申请日：2007-05-23

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： G01R1/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

摘要翻译： 提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。 等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。 电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。 提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。 采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置 以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。 还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。