公开(公告)号：US20120206127A1

公开(公告)日：2012-08-16

申请号：US13456122

申请日：2012-04-25

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： G01R19/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

摘要翻译： 提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。 一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。 在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。 每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。 产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压 信号和脉冲RF偏置电压信号的期望电压值。

公开(公告)号：US20130050892A1

公开(公告)日：2013-02-28

申请号：US13663393

申请日：2012-10-29

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/683

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

摘要翻译： 提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。 一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。 在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。 每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。 产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压 信号和脉冲RF偏置电压信号的期望电压值。

公开(公告)号：US08192576B2

公开(公告)日：2012-06-05

申请号：US11805607

申请日：2007-05-23

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

摘要翻译： 提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。 等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。 电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。 提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。 采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置 以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。 还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

公开(公告)号：US08303763B2

公开(公告)日：2012-11-06

申请号：US13456122

申请日：2012-04-25

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

摘要翻译： 提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。 一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。 在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。 每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。 产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压 信号和脉冲RF偏置电压信号的期望电压值。

公开(公告)号：US20100315064A1

公开(公告)日：2010-12-16

申请号：US11805607

申请日：2007-05-23

申请人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

发明人： Andras Kuthi ,  Stephen Hwang ,  James C. Vetter ,  Greg Eilenstine ,  Rongping Wang ,  Tuan Ngo

IPC分类号： G01R1/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

摘要翻译： 提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。 等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。 电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。 提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。 采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置 以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。 还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

公开(公告)号：US5689215A

公开(公告)日：1997-11-18

申请号：US652037

申请日：1996-05-23

申请人： Brett Richardson ,  Tuan Ngo ,  Michael S. Barnes

发明人： Brett Richardson ,  Tuan Ngo ,  Michael S. Barnes

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H03H7/40

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H03H7/40

摘要： An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.

摘要翻译： 一个r.f. 场由无功阻抗元件提供给真空等离子体处理室中的等离子体。 元件和源通过匹配网络连接，该匹配网络包括控制源的负载并将负载（包括无功阻抗元件和等离子体）调谐到源的第一和第二可变电抗。 改变第一和第二可变电抗的值，以确定第二可变电抗的每个单位变化的第一可变电抗量的变化量，以获得看见和看出r.f的输出端之间的阻抗之间的最佳匹配。 资源。 然后，基于确定，第一和第二可变电抗的值同时变化，直到看到的进入和退出r.f的输出端之间的阻抗之间的最佳阻抗匹配。 来源达到。

公开(公告)号：US20060176597A1

公开(公告)日：2006-08-10

申请号：US11052381

申请日：2005-02-07

申请人： Tuan Ngo ,  Craig Brannon ,  John Price

发明人： Tuan Ngo ,  Craig Brannon ,  John Price

IPC分类号： G11B5/09 ,  G11B5/02

CPC分类号： G11B5/465

摘要： A write head drive circuit for a magnetic data storage device is configured to drive a write head with a write head degaussing current that is applied at the end of a write cycle. The write head degaussing current is an alternating current waveform with a programmable number of current pulses with decreasing amplitude and a frequency controlled by a CMOS ring oscillator. The CMOS ring oscillator includes switchable feedback paths to control its frequency. A programmable timer terminates the write head degaussing current after an interval of time dependent on signals that indicate the programmable number of current pulses and the frequency of the CMOS oscillator.

摘要翻译： 用于磁数据存储装置的写头驱动电路被配置为以写周期结束时施加的写磁头消磁电流来驱动写头。 写头消磁电流是具有可编程数量的电流脉冲的交流电流波形，具有降低的幅度和由CMOS环形振荡器控制的频率。 CMOS环形振荡器包括可切换的反馈路径来控制其频率。 可编程定时器根据指示电流脉冲的可编程数量和CMOS振荡器的频率的信号间隔时间间隔终止写头去磁电流。

公开(公告)号：US20050152206A1

公开(公告)日：2005-07-14

申请号：US10753691

申请日：2004-01-08

申请人： Raymond Barnett ,  Tuan Ngo

发明人： Raymond Barnett ,  Tuan Ngo

IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/02 ,  G11B5/40 ,  G11C8/00

CPC分类号： G11B5/02 ,  G11B5/012 ,  G11B5/40 ,  G11B2005/0016

摘要： The present invention describes a voltage-mode boosting write driver circuit (160), comprising a plurality of inputs (WDP, WDN), a plurality of outputs (HWX, HWY), a transducer (L2), a flex interconnection (T1) coupled to the outputs (HWX, HWY) and to the transducer (L2), a first resistor (R15) and a second resistor (R43) coupled to the outputs (HWX, HWY) and to the transducer (L2), an H-switch (Q15, Q60, Q11, Q22) coupled to the resistors (R15, R43), and a plurality of top boosting circuits (Q42, Q47, R36, and Q43, Q48, R37) coupled to the outputs (HWX, HWY).

摘要翻译： 本发明描述了包括多个输入（WDP，WDN），多个输出（HWX，HWY），换能器（L 2），柔性互连（T 1）的电压模式升压写入驱动器电路 ）连接到所述输出（HWX，HWY）和所述换能器（L 2），耦合到所述输出端（HWX，HWY）和所述换能器（L 2）的第一电阻器（R 15）和第二电阻器 ），耦合到电阻器（R 15，R 43）的H开关（Q 15，Q 60，Q 11，Q 22）和多个顶部升压电路（Q42，Q47，R36和Q 43，Q 48，R 37）耦合到输出端（HWX，HWY）。

公开(公告)号：US6060837A

公开(公告)日：2000-05-09

申请号：US335493

申请日：1999-06-18

申请人： Brett C. Richardson ,  Tuan Ngo

发明人： Brett C. Richardson ,  Tuan Ngo

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/3299

摘要： Variable reactances of a matching network connected between an r.f. source and a plasma load of a vacuum plasma chamber processing a workpiece are varied so a tendency of the plasma to change in an unstable manner which can adversely affect processing of the workpiece is avoided while matching is approached. The plasma tendency to change in an unstable manner is detected by monitoring an electrical parameter resulting from r.f. current flowing between the source and load via the network. The parameter can be (1) statistically based, e.g. variance of percent delivered power, or (2) amplitude modulation in one or both of the 2-20 kHz and 50-200 kHz ranges.

摘要翻译： 连接在r.f.之间的匹配网络的可变电抗 处理工件的真空等离子体室的源极和等离子体负载变化，从而避免了等离子体以不稳定的方式改变的趋势，这可能不利地影响工件的加工，同时接近匹配。 通过监测由r.f产生的电参数来检测等离子体以不稳定方式改变的趋势。 通过网络在电源和负载之间流动的电流。 参数可以是（1）统计学上的，例如 传输功率百分比的变化，或（2）2-20 kHz和50-200 kHz范围中的一个或两个的幅度调制。

公开(公告)号：US20070193013A1

公开(公告)日：2007-08-23

申请号：US11358666

申请日：2006-02-21

申请人： Spyros Mellas ,  Paul Benton ,  Charles Bruggemann ,  Mark Goebel ,  Joseph Lendway ,  Tuan Ngo ,  Peter Parlow ,  Carl Robinson

发明人： Spyros Mellas ,  Paul Benton ,  Charles Bruggemann ,  Mark Goebel ,  Joseph Lendway ,  Tuan Ngo ,  Peter Parlow ,  Carl Robinson

IPC分类号： B23P17/00 ,  B23P11/00 ,  B23P13/04

CPC分类号： B21C37/185 ,  B21C37/065 ,  B21D26/033 ,  B62D25/04 ,  Y10T29/49622 ,  Y10T29/49805 ,  Y10T29/49968 ,  Y10T29/49995

摘要： A method is provided for forming a complexly-shaped tubular structure such as a tapered pillar or other structure for a vehicle body. A sheet metal blank having a longitudinal axis is rolled about the longitudinal axis to form a tubular shape and the side edges of the blank are then welded together to form a tube. The tube is then enclosed in a hydroforming die and pressurized to conform the tube to the shape of the die and thereby form the desired complex shape. The sheet metal blank may be formed by the end-to-end welding together of a plurality of separate sheet metal blanks that differ from one another in characteristic including material thickness, material alloy composition, and/or coating. One or more of the blanks can have side edges that are non-parallel so that the tube will taper in diameter along its length.

摘要翻译： 提供了一种用于形成诸如锥形支柱或其他用于车体的结构的复杂形状的管状结构的方法。 具有纵向轴线的片状金属坯料围绕纵向轴线卷绕以形成管状，然后将坯料的侧边缘焊接在一起以形成管。 然后将管道封闭在液压成形模具中并加压以使管与管芯的形状一致，从而形成所需的复合形状。 金属板坯可以通过在包括材料厚度，材料合金组成和/或涂层的特性彼此不同的多个单独的金属板坯的端对端焊接在一起而形成。 一个或多个坯料可以具有不平行的侧边缘，使得管沿着其长度的直径逐渐变细。