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    Network characterization, feature extraction and application to classification
    4.
    发明授权
    Network characterization, feature extraction and application to classification 有权
    网络表征，特征提取和应用分类

    公开(公告)号：US08271414B2

    公开(公告)日：2012-09-18

    申请号：US12508791

    申请日：2009-07-24

    申请人： Guillermo Alberto Cecchi ,  Srinivas Ravi Viraraghava Iyengar ,  Avi Ma'ayan ,  Ravishankar Rao ,  Gustavo Alejandro Stolovitzky ,  John Michael Wagner

    发明人： Guillermo Alberto Cecchi ,  Srinivas Ravi Viraraghava Iyengar ,  Avi Ma'ayan ,  Ravishankar Rao ,  Gustavo Alejandro Stolovitzky ,  John Michael Wagner

    IPC分类号： G06F17/00 ,  G06N5/02

    CPC分类号： G06K9/6296 ,  G06F19/00 ,  G06N99/005 ,  G16H50/70

    摘要： Methods, systems and apparatus for characterizing networks are presented. For example, a method of characterizing a network represented by a plurality of nodes and a plurality of edges is provided. The method may be implemented on a processor device and includes calculating, for example, by the processor device, a passthrough count of at least a portion of the network. The passthrough count includes a count of a number of passthroughs in the at least a portion of the network. A passthrough includes one of the plurality of nodes, a directed edge of the plurality of edges coupled to the one of the plurality of nodes, and another edge of the plurality of edges coupled to the one of the plurality of nodes. At most one of the directed edge and the other edge is directed towards the one of the plurality of nodes. At most one of the directed edge and the other edge is directed away from the one of the plurality of nodes.

    摘要翻译： 提出了表征网络的方法，系统和装置。 例如，提供了表征由多个节点和多个边缘表示的网络的方法。 该方法可以在处理器设备上实现，并且包括例如由处理器设备计算网络的至少一部分的直通计数。 通过计数包括在网络的至少一部分中的通过数量的计数。 传播包括多个节点中的一个，耦合到多个节点中的一个节点的多个边缘中的有向边缘，以及耦合到多个节点中的一个节点的多个边缘中的另一个边缘。 有向边缘和另一边缘中的至少一个被引导到多个节点中的一个。 定向边缘和另一边缘中的至少一个被引导离开多个节点中的一个。

    Nanofludic field effect transistor based on surface charge modulated nanochannel
    5.
    发明授权
    Nanofludic field effect transistor based on surface charge modulated nanochannel 有权
    基于表面电荷调制纳米通道的纳米线性场效应晶体管

    公开(公告)号：US08618581B2

    公开(公告)日：2013-12-31

    申请号：US13365577

    申请日：2012-02-03

    申请人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen M. Rossnagel ,  Gustavo Alejandro Stolovitzky

    发明人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen M. Rossnagel ,  Gustavo Alejandro Stolovitzky

    IPC分类号： G01N27/403

    CPC分类号： H01L51/0558 ,  B82Y10/00 ,  G01N27/4148 ,  G01N33/48721 ,  H01L51/0093 ,  Y10S977/938

    摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.

    摘要翻译： 场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。 栅极具有与至少一个绝缘层不同的表面电荷极性。 纳米通道穿过膜，连接储存器的两个部分。 该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压通过离子通道输送离子。

    Nanofludic field effect transistor based on surface charge modulated nanochannel
    6.
    发明授权
    Nanofludic field effect transistor based on surface charge modulated nanochannel 有权
    基于表面电荷调制纳米通道的纳米线性场效应晶体管

    公开(公告)号：US08110410B2

    公开(公告)日：2012-02-07

    申请号：US12493811

    申请日：2009-06-29

    申请人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen M. Rossnagel ,  Gustavo Alejandro Stolovitzky

    发明人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen M. Rossnagel ,  Gustavo Alejandro Stolovitzky

    IPC分类号： H01L21/00

    CPC分类号： H01L51/0558 ,  B82Y10/00 ,  G01N27/4148 ,  G01N33/48721 ,  H01L51/0093 ,  Y10S977/938

    摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.

    摘要翻译： 场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。 栅极具有与至少一个绝缘层不同的表面电荷极性。 纳米通道穿过膜，连接储存器的两个部分。 该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压通过离子通道输送离子。

    NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL
    7.
    发明申请
    NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL 有权
    基于表面电荷调制纳米通道的纳米场效应晶体管

    公开(公告)号：US20120132886A1

    公开(公告)日：2012-05-31

    申请号：US13365577

    申请日：2012-02-03

    申请人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Gustavo Alejandro Stolovitzky

    发明人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Gustavo Alejandro Stolovitzky

    IPC分类号： H01L51/10 ,  B82Y99/00

    CPC分类号： H01L51/0558 ,  B82Y10/00 ,  G01N27/4148 ,  G01N33/48721 ,  H01L51/0093 ,  Y10S977/938

    摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.

    摘要翻译： 场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。 栅极具有与至少一个绝缘层不同的表面电荷极性。 纳米通道穿过膜，连接储存器的两个部分。 该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压通过离子通道输送离子。

    Network Characterization, Feature Extraction and Application to Classification
    8.
    发明申请
    Network Characterization, Feature Extraction and Application to Classification 有权
    网络特征，特征提取和分类应用

    公开(公告)号：US20110022355A1

    公开(公告)日：2011-01-27

    申请号：US12508791

    申请日：2009-07-24

    申请人： Guillermo Alberto Cecchi ,  Srinivas Ravi Viraraghava Iyengar ,  Avi Ma'ayan ,  Ravishankar Rao ,  Gustavo Alejandro Stolovitzky ,  John Michael Wagner

    发明人： Guillermo Alberto Cecchi ,  Srinivas Ravi Viraraghava Iyengar ,  Avi Ma'ayan ,  Ravishankar Rao ,  Gustavo Alejandro Stolovitzky ,  John Michael Wagner

    IPC分类号： G06F15/00

    CPC分类号： G06K9/6296 ,  G06F19/00 ,  G06N99/005 ,  G16H50/70

    摘要： Methods, systems and apparatus for characterizing networks are presented. For example, a method of characterizing a network represented by a plurality of nodes and a plurality of edges is provided. The method may be implemented on a processor device and includes calculating, for example, by the processor device, a passthrough count of at least a portion of the network. The passthrough count includes a count of a number of passthroughs in the at least a portion of the network. A passthrough includes one of the plurality of nodes, a directed edge of the plurality of edges coupled to the one of the plurality of nodes, and another edge of the plurality of edges coupled to the one of the plurality of nodes. At most one of the directed edge and the other edge is directed towards the one of the plurality of nodes. At most one of the directed edge and the other edge is directed away from the one of the plurality of nodes.

    摘要翻译： 提出了表征网络的方法，系统和装置。 例如，提供了表征由多个节点和多个边缘表示的网络的方法。 该方法可以在处理器设备上实现，并且包括例如由处理器设备计算网络的至少一部分的直通计数。 通过计数包括在网络的至少一部分中的通过数量的计数。 传播包括多个节点中的一个，耦合到多个节点中的一个节点的多个边缘中的有向边缘，以及耦合到多个节点中的一个节点的多个边缘中的另一个边缘。 有向边缘和另一边缘中的至少一个被引导到多个节点中的一个。 定向边缘和另一边缘中的至少一个被引导离开多个节点中的一个。

    NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL
    9.
    发明申请
    NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL 有权
    基于表面电荷调制纳米通道的纳米场效应晶体管

    公开(公告)号：US20100327255A1

    公开(公告)日：2010-12-30

    申请号：US12493811

    申请日：2009-06-29

    申请人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Gustavo Alejandro Stolovitzky

    发明人： Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Gustavo Alejandro Stolovitzky

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0558 ,  B82Y10/00 ,  G01N27/4148 ,  G01N33/48721 ,  H01L51/0093 ,  Y10S977/938

    摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.

    摘要翻译： 场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。 栅极具有与至少一个绝缘层不同的表面电荷极性。 纳米通道穿过膜，连接储存器的两个部分。 该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压控制离子通过离子通道的输送。