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公开(公告)号：US08084813B2
公开(公告)日：2011-12-27
申请号：US11949221
申请日：2007-12-03
IPC分类号： H01L29/66
CPC分类号： H01L29/7828 , H01L29/0696 , H01L29/0847 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/66666
摘要： A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability.
摘要翻译： 形成在沟槽中的短栅极高功率金属氧化物半导体场效应晶体管包括具有由沟槽内的间隔物限定的栅极长度的短栅极。 晶体管还包括在沟槽下方延伸并超出沟槽角部的掩埋区域，其有效地屏蔽栅极与高漏极电压，以防止短沟道效应并从而提高器件性能和可靠性。
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公开(公告)号：US08421148B2
公开(公告)日：2013-04-16
申请号：US11855595
申请日：2007-09-14
CPC分类号： H01L29/7827 , H01L29/0623 , H01L29/1095 , H01L29/1608 , H01L29/2003 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/45 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability.
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公开(公告)号：US20090224354A1
公开(公告)日：2009-09-10
申请号：US12042614
申请日：2008-03-05
IPC分类号： H01L29/872 , H01L21/00
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/66143 , H01L29/66212
摘要： A junction barrier Schottky diode is provided as having submicron channel width between implant regions by way of a process including the use of spacer technology. On-state resistance is lowered by providing the implant regions in a channel layer having increased dopant concentration.
摘要翻译： 通过包括使用间隔物技术的方法，提供了一个结屏障肖特基二极管，其具有在植入区域之间的亚微米通道宽度。 通过在具有增加的掺杂剂浓度的沟道层中提供注入区域来降低导通电阻。
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公开(公告)号：US20090140326A1
公开(公告)日：2009-06-04
申请号：US11949221
申请日：2007-12-03
IPC分类号： H01L29/00 , H01L21/336
CPC分类号： H01L29/7828 , H01L29/0696 , H01L29/0847 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/66666
摘要： A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability.
摘要翻译： 形成在沟槽中的短栅极高功率金属氧化物半导体场效应晶体管包括具有由沟槽内的间隔物限定的栅极长度的短栅极。 晶体管还包括在沟槽下方延伸并超出沟槽角部的掩埋区域，其有效地屏蔽栅极与高漏极电压，以防止短沟道效应并从而提高器件性能和可靠性。
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公开(公告)号：US20090072241A1
公开(公告)日：2009-03-19
申请号：US11855595
申请日：2007-09-14
IPC分类号： H01L29/24
CPC分类号： H01L29/7827 , H01L29/0623 , H01L29/1095 , H01L29/1608 , H01L29/2003 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/45 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability.
摘要翻译： 沟槽金属氧化物半导体场效应晶体管或UMOSFET包括在沟槽下方延伸并超出沟槽的角的掩埋区域。 掩埋区域与UMOSFET的源极电位相关联，并分解了跨结构实现的潜力。 这有效地屏蔽来自沟槽角的电场，以减少栅极氧化物应力，从而提高器件的性能和可靠性。
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