公开(公告)号：US20060278913A1

公开(公告)日：2006-12-14

申请号：US11147976

申请日：2005-06-08

申请人： Andrei Mihnea ,  Behnam Moradi ,  Paul Rudeck ,  Aritome Seiichi ,  Di Li

发明人： Andrei Mihnea ,  Behnam Moradi ,  Paul Rudeck ,  Aritome Seiichi ,  Di Li

IPC分类号： H01L29/788 ,  H01L21/336 ,  G11C16/04

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

摘要： A plurality of memory cell stacks are formed over a substrate. The substrate does not have diffusion regions between each memory cell stack to link the memory cells. The cells are formed close enough such that the memory cells are linked serially by the electric fields generated by each floating gate in the channel regions. In one embodiment, an n-layer is implanted at the top of the substrate to increase conductivity between cells. The select transistors can be linked to the serial string by diffusion regions or by interaction of the electric fields between the select transistor channel and the memory cell channel.

摘要翻译： 多个存储单元堆叠形成在衬底上。 衬底在每个存储单元堆之间不具有扩散区，以连接存储单元。 电池形成得足够接近，使得存储器单元由通道区域中的每个浮动栅极产生的电场串联连接。 在一个实施例中，在衬底的顶部注入n层以增加电池之间的导电性。 选择晶体管可以通过扩散区域或通过选择晶体管沟道和存储单元通道之间的电场的相互作用而连接到串行串。