公开(公告)号：US20080179010A1

公开(公告)日：2008-07-31

申请号：US11698189

申请日：2007-01-26

Applicant: Andrew D. Bailey III ,  Alan M. Schoepp ,  Gregory Sexton ,  William S. Kennedy

Inventor： Andrew D. Bailey III ,  Alan M. Schoepp ,  Gregory Sexton ,  William S. Kennedy

IPC: C23F1/00 ,  H01L21/306 ,  H01L21/302

CPC classification number: H01L21/3065 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6838

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract translation: 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。

公开(公告)号：US20080182412A1

公开(公告)日：2008-07-31

申请号：US11698190

申请日：2007-01-26

Applicant: Andrew D. Bailey III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

Inventor： Andrew D. Bailey III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

IPC: C23F1/00 ,  H01L21/306 ,  H01L21/302

CPC classification number: H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract translation: 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

公开(公告)号：US06922603B1

公开(公告)日：2005-07-26

申请号：US10327233

申请日：2002-12-20

Applicant: Andrew D. Bailey III

Inventor： Andrew D. Bailey III

IPC: G06F19/00 ,  H01L21/66

CPC classification number: H01L22/20

Abstract: A system and method of determining multiple uniformity metrics of a semiconductor wafer includes quantitatively defining a location metric of a nonuniformity on the surface of the wafer. A quantity is measured at multiple locations on a top surface of the wafer and a center of mass is of the nonuniformity is determined.

Abstract translation: 确定半导体晶片的多个均匀性度量的系统和方法包括定量地定义晶片表面上的不均匀性的位置度量。 在晶片的顶面上的多个位置处测量量，并且确定质心的不均匀性。