Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements
    2.
    发明申请
    Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements 失效
    设备,EUV光刻设备和防止和清洁光学元件污染的方法

    公开(公告)号:US20060192158A1

    公开(公告)日:2006-08-31

    申请号:US11375267

    申请日:2006-03-14

    IPC分类号: G01J3/10

    摘要: The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

    摘要翻译: 本发明涉及一种防止在包括多层系统的光学元件的表面上的污染的方法,该方法在其包括残留气体气氛的抽真空封闭系统中以信号波长的辐射曝光期间,由此产生的光电流通过 测量来自多层系统的辐射表面的光发射。 光电流用于调节残留气体的气体成分。 气体组成根据光电流的至少一个下限和上限阈值而改变。 本发明还涉及一种用于在曝光期间调节至少一个光学元件的表面上的污染的装置以及用于清洁被碳污染的光学元件的表面的EUV-光刻设备和方法。

    Device, euv-lithographic device and method for preventing and cleaning contamination on optical elements
    3.
    发明申请
    Device, euv-lithographic device and method for preventing and cleaning contamination on optical elements 失效
    装置,光刻设备和防止和清洁光学元件污染的方法

    公开(公告)号:US20050104015A1

    公开(公告)日:2005-05-19

    申请号:US10506555

    申请日:2003-03-07

    摘要: The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

    摘要翻译: 本发明涉及一种防止在包括多层系统的光学元件的表面上的污染的方法,该方法在其包括残留气体气氛的抽真空封闭系统中以信号波长的辐射曝光期间,由此产生的光电流通过 测量来自多层系统的辐射表面的光发射。 光电流用于调节残留气体的气体成分。 气体组成根据光电流的至少一个下限和上限阈值而改变。 本发明还涉及一种用于在曝光期间调节至少一个光学元件的表面上的污染的装置以及用于清洁被碳污染的光学元件的表面的EUV-光刻设备和方法。

    Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements
    4.
    发明授权
    Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements 失效
    设备,EUV光刻设备和防止和清洁光学元件污染的方法

    公开(公告)号:US07462842B2

    公开(公告)日:2008-12-09

    申请号:US11375267

    申请日:2006-03-14

    IPC分类号: G03F7/20 B08B7/00 G01N23/227

    摘要: The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

    摘要翻译: 本发明涉及一种防止在包括多层系统的光学元件的表面上的污染的方法,该方法在其包括残留气体气氛的抽真空封闭系统中以信号波长的辐射曝光期间,由此产生的光电流通过 测量来自多层系统的辐射表面的光发射。 光电流用于调节残留气体的气体成分。 气体组成根据光电流的至少一个下限和上限阈值而改变。 本发明还涉及一种用于在曝光期间调节至少一个光学元件的表面上的污染的装置以及用于清洁被碳污染的光学元件的表面的EUV-光刻设备和方法。

    Device, EUV-lithographic device and method for preventing and cleaning contamination on optical elements
    5.
    发明授权
    Device, EUV-lithographic device and method for preventing and cleaning contamination on optical elements 失效
    设备,EUV光刻设备和防止和清洁光学元件污染的方法

    公开(公告)号:US07060993B2

    公开(公告)日:2006-06-13

    申请号:US10506555

    申请日:2003-03-07

    IPC分类号: G03F7/20 B08B7/00 G01N23/227

    摘要: The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

    摘要翻译: 本发明涉及一种防止在包括多层系统的光学元件的表面上的污染的方法,该方法在其包括残留气体气氛的抽真空封闭系统中以信号波长的辐射曝光期间,由此产生的光电流通过 测量来自多层系统的辐射表面的光发射。 光电流用于调节残留气体的气体成分。 气体组成根据光电流的至少一个下限和上限阈值而改变。 本发明还涉及一种用于在曝光期间调节至少一个光学元件的表面上的污染的装置以及用于清洁被碳污染的光学元件的表面的EUV-光刻设备和方法。