公开(公告)号：US20070228618A1

公开(公告)日：2007-10-04

申请号：US11686901

申请日：2007-03-15

申请人： Andrzei Kaszuba ,  Juan Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

发明人： Andrzei Kaszuba ,  Juan Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

IPC分类号： B29C35/08

CPC分类号： B05D3/067 ,  B29C71/04 ,  B29C2035/0827 ,  F26B3/28 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US08597011B2

公开(公告)日：2013-12-03

申请号：US12976746

申请日：2010-12-22

申请人： Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

发明人： Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

IPC分类号： B29C35/08

CPC分类号： B05D3/067 ,  B29C71/04 ,  B29C2035/0827 ,  F26B3/28 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20120003398A1

公开(公告)日：2012-01-05

申请号：US12976746

申请日：2010-12-22

申请人： Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

发明人： Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

IPC分类号： B29C35/08 ,  G21K5/00

CPC分类号： B05D3/067 ,  B29C71/04 ,  B29C2035/0827 ,  F26B3/28 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US07909595B2

公开(公告)日：2011-03-22

申请号：US11686901

申请日：2007-03-15

申请人： Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

发明人： Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Ashish Shah ,  Inna Shmurun

IPC分类号： B29C35/08

CPC分类号： B05D3/067 ,  B29C71/04 ,  B29C2035/0827 ,  F26B3/28 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20060225767A1

公开(公告)日：2006-10-12

申请号：US11424959

申请日：2006-06-19

申请人： Maosheng Zhao ,  Juan Rocha-Alvarez ,  Inna Shmurun ,  Soova Sen ,  Mao Lim ,  Shankar Venkataraman ,  Ju-Hyung Lee

发明人： Maosheng Zhao ,  Juan Rocha-Alvarez ,  Inna Shmurun ,  Soova Sen ,  Mao Lim ,  Shankar Venkataraman ,  Ju-Hyung Lee

IPC分类号： B08B6/00 ,  B08B9/00

CPC分类号： C23C16/4405 ,  C23C16/458 ,  C23C16/46 ,  H01J37/32082 ,  H01J37/32862 ,  H01L21/67103

摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

公开(公告)号：US20060231205A1

公开(公告)日：2006-10-19

申请号：US11426154

申请日：2006-06-23

申请人： Maosheng Zhao ,  Juan Rocha-Alvarez ,  Inna Shmurun ,  Soova Sen ,  Mao Lim ,  Shankar Venkataraman ,  Ju-Hyung Lee

发明人： Maosheng Zhao ,  Juan Rocha-Alvarez ,  Inna Shmurun ,  Soova Sen ,  Mao Lim ,  Shankar Venkataraman ,  Ju-Hyung Lee

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： C23C16/4405 ,  C23C16/458 ,  C23C16/46 ,  H01J37/32082 ,  H01J37/32862 ,  H01L21/67103

摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

公开(公告)号：US20060027165A1

公开(公告)日：2006-02-09

申请号：US10910269

申请日：2004-08-03

申请人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

发明人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

IPC分类号： C23C16/00

CPC分类号： H01L21/67103

摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.

摘要翻译： 用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

公开(公告)号：US07628863B2

公开(公告)日：2009-12-08

申请号：US10910269

申请日：2004-08-03

申请人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

发明人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/67103

摘要： A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.

摘要翻译： 一种用于在处理区域中的用于化学气相沉积在基板上的室的方法和装置，包括具有加热盖的气体箱，所述加热盖包括气体入口通道，以及连接到加热盖的面板，所述面板定位成将来自加热气体箱 到基板处理区域。 另外，一种向化学气相沉积室提供热量的方法，包括向燃气箱的盖子供给热量，以及通过从盖子的热传递来加热连接到气体箱的面板。

公开(公告)号：US20070107660A9

公开(公告)日：2007-05-17

申请号：US10910269

申请日：2004-08-03

申请人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

发明人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

IPC分类号： C23C16/00

CPC分类号： H01L21/67103

摘要： A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.

摘要翻译： 一种用于在处理区域中的用于化学气相沉积在基板上的室的方法和装置，包括具有加热盖的气体箱，所述加热盖包括气体入口通道，以及连接到加热盖的面板，所述面板定位成将来自加热气体箱 到基板处理区域。 另外，一种向化学气相沉积室提供热量的方法，包括向燃气箱的盖子供给热量，以及通过从盖子的热传递来加热连接到气体箱的面板。

公开(公告)号：US06645303B2

公开(公告)日：2003-11-11

申请号：US09565914

申请日：2000-05-05

申请人： Jonathan Frankel ,  Hari Ponnekanti ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan

发明人： Jonathan Frankel ,  Hari Ponnekanti ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan

IPC分类号： C23C1600

CPC分类号： G07F17/3202 ,  G07C15/006 ,  G07F17/32

摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。