公开(公告)号：US20200024736A1

公开(公告)日：2020-01-23

申请号：US16515875

申请日：2019-07-18

Applicant: Kaushal Gangakhedkar ,  Jonathan Frankel ,  Colin C. Neikirk ,  Pravin K. Narwankar

Inventor： Kaushal Gangakhedkar ,  Jonathan Frankel ,  Colin C. Neikirk ,  Pravin K. Narwankar

IPC: C23C16/455 ,  C23C16/44 ,  A61K9/16

Abstract: A reactor for coating particles includes a vacuum chamber configured to hold particles to be coated, a vacuum port to exhaust gas from the vacuum chamber via the outlet of the vacuum chamber, a chemical delivery system configured to flow a process gas into the particles via a gas inlet on the vacuum chamber, one or more vibrational actuators located on a first mounting surface of the vacuum chamber, and a controller configured to cause the one or more vibrational actuators to generate a vibrational motion in the vacuum chamber sufficient to induce a vibrational motion in the particles held within the vacuum chamber.

公开(公告)号：US20060211344A1

公开(公告)日：2006-09-21

申请号：US11439303

申请日：2006-05-22

Applicant: Younes Achkire ,  Julia Svirchevski ,  Jonathan Frankel ,  Kien-Bang Lam

Inventor： Younes Achkire ,  Julia Svirchevski ,  Jonathan Frankel ,  Kien-Bang Lam

IPC: B24B1/00

CPC classification number: H01L21/67253 ,  G05D11/133

Abstract: A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.

Abstract translation: 稀释阶段适于向半导体器件处理设备提供稀释化学物质。 稀释阶段包括适于在稀释后储存化学物质的第一容器和适于在稀释之前储存化学物质的第二容器。 稀释阶段还可以包括适于选择性地控制化学物质和稀释剂流向第一容器的控制机构。 控制机构可操作以用化学物质填充第二容器，并且通过第二容器将稀释剂流经第一容器。

公开(公告)号：US6106630A

公开(公告)日：2000-08-22

申请号：US908249

申请日：1997-08-07

Applicant: Jonathan Frankel

Inventor： Jonathan Frankel

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC classification number: H01L21/67103 ,  C23C16/4581 ,  C23C16/46

Abstract: The present invention provides systems, methods and apparatus for processing of semiconductor wafers. Specifically, embodiments of the present invention include apparatus designed to resist etching and deposition by processing and cleaning gases in a processing chamber. The apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and facilitate cleaning of the processing chamber. In one embodiment of the invention, a heating assembly for heating a semiconductor wafer within a deposition apparatus comprises a pedestal having a substantially planar upper surface for supporting the semiconductor wafer thereon and a heating element disposed therein for heating the wafer to the required temperatures for processing. According to the invention, the pedestal includes a protective layer substantially covering and adhered to the wafer support surface. The material used in the layer is substantially resistant to reactions with and deposition by process gases and cleaning gases at temperatures up to 500.degree. C. The thickness of the protective layer usually ranges from about 2 to 30 mils and preferably between about 5 to 10 mils.

Abstract translation: 本发明提供了用于处理半导体晶片的系统，方法和装置。 具体地，本发明的实施例包括设计成通过处理和清洁处理室中的气体来抵抗蚀刻和沉积的装置。 本发明的装置允许多个工艺步骤在同一个室中原位进行，以减少总处理时间并便于清理处理室。 在本发明的一个实施例中，用于在沉积设备中加热半导体晶片的加热组件包括具有用于支撑半导体晶片的基本平坦的上表面的基座和设置在其中的用于将晶片加热到所需温度进行处理的加热元件 。 根据本发明，基座包括基本上覆盖并粘附到晶片支撑表面的保护层。 在该层中使用的材料基本上抵抗在高达500℃的温度下与工艺气体和清洁气体的反应和沉积。保护层的厚度通常为约2至30密耳，优选为约5至10密耳 。

公开(公告)号：US06645303B2

公开(公告)日：2003-11-11

申请号：US09565914

申请日：2000-05-05

Applicant: Jonathan Frankel ,  Hari Ponnekanti ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan

Inventor： Jonathan Frankel ,  Hari Ponnekanti ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan

IPC: C23C1600

CPC classification number: G07F17/3202 ,  G07C15/006 ,  G07F17/32

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US06444037B1

公开(公告)日：2002-09-03

申请号：US08746748

申请日：1996-11-13

Applicant: Jonathan Frankel ,  Visweswaren Sivaramakrishnan

Inventor： Jonathan Frankel ,  Visweswaren Sivaramakrishnan

IPC: C23C1600

CPC classification number: C23C16/45565 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/52 ,  H01J37/32522 ,  H01L21/67109 ,  H01L21/67115

Abstract: An apparatus for fabricating an integrated circuit device comprises an enclosure housing a processing chamber and having a gas inlet for receiving process gases into the processing chamber and a gas outlet for discharging the process gases. A pedestal is disposed within the processing chamber for supporting a wafer thereon. A chamber liner at least partially surrounds the pedestal and includes inner and outer portions. The inner portion comprises a material that is substantially resistant to the process gases at temperatures of at least about 400° C. The outer portion comprises an insulating material for decreasing a thermal gradient between the perimeter of the wafer and the enclosure.

Abstract translation: 一种用于制造集成电路装置的装置包括容纳处理室并具有用于将处理气体接收到处理室中的气体入口的外壳和用于排出处理气体的气体出口。 底座设置在处理室内，用于在其上支撑晶片。 腔室衬垫至少部分地围绕基座并且包括内部和外部部分。 内部部分包括在至少约400℃的温度下基本上抵抗工艺气体的材料。外部部分包括绝缘材料，用于减小晶片的周边与外壳之间的热梯度。

公开(公告)号：US6019848A

公开(公告)日：2000-02-01

申请号：US749925

申请日：1996-11-13

Applicant: Jonathan Frankel ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan ,  Eugene Fukshansky

Inventor： Jonathan Frankel ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan ,  Eugene Fukshansky

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4405 ,  C23C16/455 ,  H01L21/67011

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US5968587A

公开(公告)日：1999-10-19

申请号：US746657

申请日：1996-11-13

Applicant: Jonathan Frankel

Inventor： Jonathan Frankel

IPC: C23C16/44 ,  C23C16/50 ,  C23C16/52 ,  H01L21/00 ,  C23C16/46

CPC classification number: C23C16/452 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32522 ,  H01L21/67103

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。