公开(公告)号：US20080152838A1

公开(公告)日：2008-06-26

申请号：US11877313

申请日：2007-10-23

申请人： SOOVO SEN ,  MARK A. FODOR ,  VISWESWAREN SIVARAMAKRISHNAN ,  JUNTING LIU

发明人： SOOVO SEN ,  MARK A. FODOR ,  VISWESWAREN SIVARAMAKRISHNAN ,  JUNTING LIU

IPC分类号： H05H1/24

CPC分类号： C23C16/4585 ,  C23C16/45521 ,  C23C16/5096

摘要： Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.

摘要翻译： 根据本发明的实施例涉及可以单独使用或组合使用以减少或消除材料在半导体工件的斜面上的沉积的各种技术。 在一种方法中，阴影环覆盖在衬底的边缘上以阻止气体流向斜面区域。 阴影环边缘处的几何特征将气体流引导到晶片，以便在遮蔽边缘的同时保持晶片的厚度均匀性。 在另一种方法中，衬底加热器/支撑件构造成将净化气体流动到被支撑的衬底的边缘。 这些吹扫气体可防止工艺气体到达衬底边缘并将材料沉积在斜面区域上。

公开(公告)号：US20060162661A1

公开(公告)日：2006-07-27

申请号：US11040712

申请日：2005-01-22

申请人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

发明人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

IPC分类号： H05H1/24 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  B08B6/00

CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体盒，其具有第一入口以接收第一工艺气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

公开(公告)号：US20130253872A1

公开(公告)日：2013-09-26

申请号：US13425023

申请日：2012-03-20

申请人： Anthony Curtis ,  Soovo Sen ,  Prakash Mistry ,  Hai Wang ,  Michael George Brosseau

发明人： Anthony Curtis ,  Soovo Sen ,  Prakash Mistry ,  Hai Wang ,  Michael George Brosseau

IPC分类号： G01F25/00 ,  G06F19/00

CPC分类号： G01F25/0007

摘要： A method to calibrate a flow meter includes passing a predetermined volume of fluid through a flow meter for calibration and determining a time duration of calibration from a start time to a stop time. One or more characteristics of the flow rate of the fluid is measured with the flow meter during the time duration and a plurality of time stamped measurements based on the one or more measured flow rate characteristics are generated. The flow meter is then calibrated based on the start time, the stop time, and the plurality of time stamped measurements.

摘要翻译： 校准流量计的方法包括使预定体积的流体通过流量计进行校准，并从开始时间到停止时间确定校准的持续时间。 在持续时间期间用流量计测量流体流速的一个或多个特性，并且基于一个或多个测量的流量特性产生多个时间戳测量值。 然后基于开始时间，停止时间和多个时间戳测量来校准流量计。

公开(公告)号：US20130123990A1

公开(公告)日：2013-05-16

申请号：US13298155

申请日：2011-11-16

申请人： Alex Kulik ,  Alexander Joseph Esin ,  Nikolay Baturin ,  Soovo Sen ,  Michael G. Brosseau

发明人： Alex Kulik ,  Alexander Joseph Esin ,  Nikolay Baturin ,  Soovo Sen ,  Michael G. Brosseau

IPC分类号： G01B15/02 ,  G05B15/00 ,  G06F15/00

CPC分类号： G01N9/24

摘要： A method for measuring a density profile of a fluid in a process vessel is disclosed. The method includes emitting gamma rays into the fluid and acquiring a backscattered gamma ray counts distribution using at least one position sensitive gamma ray detector disposed proximate the vessel. The method further includes determining the density profile of the fluid contained in the process vessel based on the backscattered gamma ray counts distribution.

摘要翻译： 公开了一种用于测量处理容器中的流体的密度分布的方法。 该方法包括将伽马射线发射到流体中，并使用靠近血管设置的至少一个位置敏感的γ射线检测器获得反向散射的伽马射线计数分布。 该方法还包括基于反向散射的γ射线计数分布来确定包含在处理容器中的流体的密度分布。

公开(公告)号：US20050078953A1

公开(公告)日：2005-04-14

申请号：US10684054

申请日：2003-10-10

申请人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

发明人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  F26B3/30 ,  F26B19/00 ,  H01L21/20

CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

公开(公告)号：US07024105B2

公开(公告)日：2006-04-04

申请号：US10684054

申请日：2003-10-10

申请人： Mark A. Fodor ,  Sophia M. Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

发明人： Mark A. Fodor ,  Sophia M. Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

IPC分类号： F26B19/00

CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

公开(公告)号：US07008484B2

公开(公告)日：2006-03-07

申请号：US10140324

申请日：2002-05-06

申请人： Kang Sub Yim ,  Soovo Sen ,  Dian Sugiarto ,  Peter Lee ,  Ellie Yieh

发明人： Kang Sub Yim ,  Soovo Sen ,  Dian Sugiarto ,  Peter Lee ,  Ellie Yieh

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

公开(公告)号：US20060027165A1

公开(公告)日：2006-02-09

申请号：US10910269

申请日：2004-08-03

申请人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

发明人： Soovo Sen ,  Inna Shmurun ,  Thomas Nowak ,  Nancy Fung ,  Brian Hopper ,  Andrzej Kaszuba ,  Eller Juco

IPC分类号： C23C16/00

CPC分类号： H01L21/67103

摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.

摘要翻译： 用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

公开(公告)号：US08983028B2

公开(公告)日：2015-03-17

申请号：US13298155

申请日：2011-11-16

申请人： Alex Kulik ,  Alexander Joseph Esin ,  Nikolay Baturin ,  Soovo Sen ,  Michael George Brosseau

发明人： Alex Kulik ,  Alexander Joseph Esin ,  Nikolay Baturin ,  Soovo Sen ,  Michael George Brosseau

IPC分类号： G01N23/02 ,  G01N9/24

CPC分类号： G01N9/24

摘要： A method for measuring a density profile of a fluid in a process vessel is disclosed. The method includes emitting gamma rays into the fluid and acquiring a backscattered gamma ray counts distribution using at least one position sensitive gamma ray detector disposed proximate the vessel. The method further includes determining the density profile of the fluid contained in the process vessel based on the backscattered gamma ray counts distribution.

摘要翻译： 公开了一种用于测量处理容器中的流体的密度分布的方法。 该方法包括将伽马射线发射到流体中，并使用靠近血管设置的至少一个位置敏感的γ射线检测器获得反向散射的伽马射线计数分布。 该方法还包括基于反向散射的γ射线计数分布确定包含在处理容器中的流体的密度分布。

公开(公告)号：US20120009803A1

公开(公告)日：2012-01-12

申请号：US13212153

申请日：2011-08-17

申请人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

发明人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

IPC分类号： H01L21/318

CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体箱，其具有第一入口以接收第一处理气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。