公开(公告)号：US20070254796A1

公开(公告)日：2007-11-01

申请号：US11412024

申请日：2006-04-26

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： C03C8/18 ,  C03C8/04

CPC分类号： C03C3/062 ,  C03C3/064 ,  C03C3/083 ,  C03C3/085 ,  C03C3/091 ,  C03C27/044 ,  G01L9/0042 ,  G01L9/0055 ,  G01L19/0069

摘要： A method to prevent the catastrophic failure of electrical contacts of silicon piezoresistive transducers located on a silicon wafer at temperatures above 600° C. comprising the steps of using a lead-free glass frit to surround the contacts and bonding the sensor wafer to a glass wafer employing a lead-free glass and utilizing a modified electrostatic bonding technique to join the silicon wafer to the lead-free glass wafer to form a high temperature SOI device.

摘要翻译： 一种防止在高于600℃的温度下位于硅晶片上的硅压阻传感器的电触点的灾难性故障的方法，包括以下步骤：使用无铅玻璃料围绕触点并将传感器晶片接合到玻璃晶片 采用无铅玻璃并利用改进的静电接合技术将硅晶片连接到无铅玻璃晶片以形成高温SOI器件。

公开(公告)号：US20070114624A1

公开(公告)日：2007-05-24

申请号：US11651796

申请日：2007-01-10

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： H01L29/84

CPC分类号： G01L19/147

摘要： A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.

公开(公告)号：US20070099392A1

公开(公告)日：2007-05-03

申请号：US11262179

申请日：2005-10-28

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： H01L21/76

CPC分类号： H01L21/76251

摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

摘要翻译： 一种制造绝缘体上半导体器件的方法，包括：提供其上具有约200埃厚的氧化物层的第一半导体晶片; 蚀刻第一半导体晶片以在其中升高图案; 通过约200埃厚的氧化物层掺杂第一半导体晶片的凸起图案; 提供其上具有氧化物的第二半导体晶片; 并且在升高的温度下将第一半导体晶片氧化物接合到第二半导体晶片氧化物。

公开(公告)号：US20080028863A1

公开(公告)日：2008-02-07

申请号：US11709639

申请日：2007-02-22

申请人： Anthony Kurtz ,  Wolf Landmann ,  Alexander Ned

发明人： Anthony Kurtz ,  Wolf Landmann ,  Alexander Ned

IPC分类号： G01L9/06

CPC分类号： G01L9/065

摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.

摘要翻译： 一种高温压力感测系统（传感器），包括：由绝缘体上硅（SOI）工艺形成的压力感测压阻传感器; 可操作地耦合到压阻传感器的SOI放大器电路; 包括多个电阻的SOI增益控制器电路，当选择性地耦合到放大器时调节放大器的增益; 分别对应于电阻的多个片外触点，用于电激活相应的电阻并且使用用于SOI传感器的金属化层和适合于高温互连（接合）的SOI ASIC; 其中所述压阻传感器，放大器电路和增益控制电路适用于温度高于175摄氏度并达到250℃至300℃的环境中，并且其中整个换能器具有对核的高免疫性 辐射。

公开(公告)号：US20070157735A1

公开(公告)日：2007-07-12

申请号：US11716289

申请日：2007-03-09

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： G01L9/00

CPC分类号： G01L9/0042 ,  G01L9/0055

摘要： A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

公开(公告)号：US20070089526A1

公开(公告)日：2007-04-26

申请号：US11258787

申请日：2005-10-26

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： G01L9/00

CPC分类号： G01L9/0042 ,  G01L9/0055

摘要： A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

公开(公告)号：US20070068267A1

公开(公告)日：2007-03-29

申请号：US11234724

申请日：2005-09-23

申请人： Anthony Kurtz ,  Wolf Landmann ,  Alexander Ned

发明人： Anthony Kurtz ,  Wolf Landmann ,  Alexander Ned

IPC分类号： G01L9/06

CPC分类号： G01L9/065

摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.

摘要翻译： 一种高温压力感测系统（传感器），包括：由绝缘体上硅（SOI）工艺形成的压力感测压阻传感器; 可操作地耦合到压阻传感器的SOI放大器电路; 包括多个电阻的SOI增益控制器电路，当选择性地耦合到放大器时调节放大器的增益; 分别对应于电阻的多个片外触点，用于电激活相应的电阻并且使用用于SOI传感器的金属化层和适合于高温互连（接合）的SOI ASIC; 其中所述压阻传感器，放大器电路和增益控制电路适用于温度高于175摄氏度并达到250℃至300℃的环境中，并且其中整个换能器具有对核的高免疫性 辐射。

公开(公告)号：US20060157840A1

公开(公告)日：2006-07-20

申请号：US11039587

申请日：2005-01-20

申请人： Anthony Kurtz ,  Alexander Ned ,  Scott Goodman

发明人： Anthony Kurtz ,  Alexander Ned ,  Scott Goodman

IPC分类号： H01L23/02

CPC分类号： G01L9/0055 ,  G01L19/0084

摘要： A silicon wafer is fabricated utilizing two or more semiconductor wafers. The wafers are processed using conventional wafer processing techniques and the wafer contains a plurality of output terminals which essentially are platinum titanium metallization or high temperature contacts. A glass cover member is provided which has a plurality of through holes. Each through hole is associated with a contact on the semiconductor wafer. A high temperature lead is directed through the through hole or aperture in the glass cover and is bonded directly to the appropriate contact. The lead is of a sufficient length to extend into a second non through aperture in the contact glass. The non through aperture is located on the side of the contact glass not in contact with the silicon sensor. The non through aperture is then filled with a high temperature conductive glass frit. A plurality of slots are provided. Each slot is associated with a through and a non through aperture to accommodate the wire as directed from the through aperture through the slot and into the non through aperture. The slots provide means of retaining or securing the wire as it passes from the through aperture to the non through aperture. The non through apertures as indicated are filled with a high temperature conductive glass frit which glass frit accommodates suitable pins.

摘要翻译： 利用两个或更多个半导体晶片制造硅晶片。 使用常规晶片处理技术处理晶片，并且晶片包含基本上是铂钛金属化或高温接触的多个输出端子。 提供了一种具有多个通孔的玻璃盖构件。 每个通孔与半导体晶片上的接触相关联。 高温引线通过玻璃盖中的通孔或孔直接接合到适当的接触处。 引线具有足够的长度以延伸到接触玻璃中的第二非通孔中。 非通孔位于接触玻璃的不与硅传感器接触的一侧。 然后用高温导电玻璃料填充非通孔。 提供多个槽。 每个狭槽与通孔和非通孔相关联，以便从通孔穿过狭槽引导并且进入非通孔。 这些槽提供了当线从通孔到非通孔时保持或固定的装置。 如所示的非通孔填充有玻璃料容纳适当针脚的高温导电玻璃料。

公开(公告)号：US20070039391A1

公开(公告)日：2007-02-22

申请号：US11585546

申请日：2006-10-24

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： G01L19/04

CPC分类号： G01L19/0084 ,  G01L9/0055

摘要： An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the aperture formed by the frame, allowing the active area of the sensor to be exposed to the pressure medium. The sealing cover is bonded to the periphery of the rim and to the glass supporting pedestal.

摘要翻译： 超高温密封保护换能器包括具有有源区域的传感器芯片，在该有源区域上形成压电感测元件。 这些元件位于硅晶片芯片的顶表面上并且具有从芯片的有源区域延伸的引线和端子。 活动区域被延伸的边缘或框架包围。 有源区域涂覆有钝化压阻感测网络的氧化物层。 然后将芯片连接到玻璃基座，其尺寸大于传感器芯片。 玻璃基座在每个角落都有一个通孔或孔。 然后将整个复合结构安装到高温集管上，其中集管的金属化区域暴露于玻璃基座中的孔; 然后将高温引线一端直接粘合到传感器芯片的金属化接触区域。 引线具有足够的长度以延伸到玻璃基座中的通孔中。 然后将密封盖连接到整个复合传感器以密封所有的互连。 密封盖是玻璃结构，具有对应于由框架形成的孔的中心孔，允许传感器的有效区域暴露于压力介质。 密封盖结合到边缘的周边和玻璃支撑基座上。

公开(公告)号：US20060283257A1

公开(公告)日：2006-12-21

申请号：US11157584

申请日：2005-06-21

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： G01L7/08

CPC分类号： G01L19/147

摘要： A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.

摘要翻译： 差压传感器具有具有顶表面和底表面的半导体晶片。 晶片的顶表面具有包含压阻元件的中心活动区域。 这些元件被钝化并被一层二氧化硅覆盖。 每个元件具有与其相关联的接触端子。 半导体晶片具有围绕有源区域的外周硅框架。 通过将外周框架结合到玻璃晶片的周边，通过阳极或静电键将半导体晶片接合到玻璃盖构件。 当玻璃晶片结合到硅框架时，内部二氧化硅框架与玻璃晶片形成压缩结合。 这种压接键可防止有害流体进入活性区或破坏硅。 将上述装置安装在集管上，使得玻璃晶片中的通孔与集管端子对准。 插头具有从插头端子引导的引脚，以使得能够对该单元进行接触。 半导体晶片的顶表面和底表面均涂覆有二氧化硅，其用于保护所有元素免受有害物质的影响。 因此，第一压力施加到一个表面，并且第二压力施加到另一个表面以实现差动操作。