公开(公告)号：US12096657B2

公开(公告)日：2024-09-17

申请号：US17504230

申请日：2021-10-18

Applicant: Apple Inc.

Inventor： Jung Yen Huang ,  Shinya Ono ,  Chin-Wei Lin ,  Akira Matsudaira ,  Cheng Min Hu ,  Chih Pang Chang ,  Ching-Sang Chuang ,  Gihoon Choo ,  Jiun-Jye Chang ,  Po-Chun Yeh ,  Shih Chang Chang ,  Yu-Wen Liu ,  Zino Lee

IPC: H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H01L29/66742 ,  H01L29/7869 ,  H10K59/1216 ,  H10K59/1201

Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

公开(公告)号：US20220181418A1

公开(公告)日：2022-06-09

申请号：US17504230

申请日：2021-10-18

Applicant: Apple Inc.

Inventor： Jung Yen Huang ,  Shinya Ono ,  Chin-Wei Lin ,  Akira Matsudaira ,  Cheng Min Hu ,  Chih Pang Chang ,  Ching-Sang Chuang ,  Gihoon Choo ,  Jiun-Jye Chang ,  Po-Chun Yeh ,  Shih Chang Chang ,  Yu-Wen Liu ,  Zino Lee

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66

Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.