公开(公告)号：US20240250217A1

公开(公告)日：2024-07-25

申请号：US18408137

申请日：2024-01-09

Applicant: Apple Inc.

Inventor： Xiaobin Xin ,  Dmitry S Sizov ,  Chi-Kang Li ,  Steve M Ting ,  Fang Ou ,  David P Bour

IPC: H01L33/44 ,  H01L33/06 ,  H01L33/16

CPC classification number: H01L33/44 ,  H01L33/06 ,  H01L33/16

Abstract: Light emitting diodes with regrown semiconductor layers and methods of manufacture are described. In an embodiment, a light emitting diode includes a base structure including a first cladding layer and a pillar structure protruding from the base layer. The pillar structure includes a mesa structure and a second cladding layer that includes a plug portion that is laterally adjacent to a plurality of quantum well layers of the mesa structure.