公开(公告)号：US20210336422A1

公开(公告)日：2021-10-28

申请号：US17228742

申请日：2021-04-13

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chinhan Lin ,  Christophe Verove ,  Jae Y Park

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/042

Abstract: An optoelectronic device includes: (i) a semiconductor substrate doped with a first level of n-type dopants, (ii) a contact semiconductor layer disposed over the semiconductor substrate and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) stack disposed over the contact semiconductor layer and including alternating first and second epitaxial semiconductor layers having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers disposed over the upper DBR, the set of epitaxial layers includes one or more III-V semiconductor materials and defines: (a) a quantum well structure, and (b) a confinement layer, and (v) a lower DBR stack disposed over the set of epitaxial layers, opposite the upper DBR, and including alternating dielectric and semiconductor layers.

公开(公告)号：US20240088623A1

公开(公告)日：2024-03-14

申请号：US17944213

申请日：2022-09-14

Applicant: Apple Inc.

Inventor： Siddharth Joshi ,  Keith Lyon ,  Arnaud Laflaquière ,  Christophe Verove

IPC: H01S5/042 ,  H01S5/42

CPC classification number: H01S5/042 ,  H01S5/423 ,  H01S5/343

Abstract: An integrated emitter device incudes a silicon die, including an array of control circuits, and a plurality of integrated emitter modules disposed on the silicon die. Each integrated emitter module includes a single epitaxial stack comprising multiple layers of III-V semiconductor compounds, which define a vertical emitter including an optically active layer and upper and lower distributed Bragg reflectors (DBRs) on opposing sides of the optically active layer, and a transistor in series with the vertical emitter and including a terminal in contact with a respective one of the control circuits, so as to actuate the vertical emitter in response to a control signal applied to the terminal by the respective one of the control circuits.

公开(公告)号：US20240079440A1

公开(公告)日：2024-03-07

申请号：US17903067

申请日：2022-09-06

Applicant: Apple Inc.

Inventor： Oray O. Cellek ,  Fei Tan ,  Gershon Rosenblum ,  Hong Wei Lee ,  Cheng-Ying Tsai ,  Jae Y. Park ,  Christophe Verove ,  John L Orlowski ,  Siddharth Joshi ,  Xiangli Li ,  David Coulon ,  Xiaofeng Fan ,  Keith Lyon ,  Nicolas Hotellier ,  Arnaud Laflaquière

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14652 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1465 ,  H04N5/378

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.

公开(公告)号：US20230085957A1

公开(公告)日：2023-03-23

申请号：US17866618

申请日：2022-07-18

Applicant: Apple Inc.

Inventor： Nicolas Hotellier ,  Arnaud Laflaquière ,  Christophe Verove ,  Fei Tan ,  Siddharth Joshi

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/02326 ,  H01S5/42

Abstract: An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.