公开(公告)号：US20230085957A1

公开(公告)日：2023-03-23

申请号：US17866618

申请日：2022-07-18

Applicant: Apple Inc.

Inventor： Nicolas Hotellier ,  Arnaud Laflaquière ,  Christophe Verove ,  Fei Tan ,  Siddharth Joshi

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/02326 ,  H01S5/42

Abstract: An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.

公开(公告)号：US20240372328A1

公开(公告)日：2024-11-07

申请号：US18143869

申请日：2023-05-05

Applicant: Apple Inc.

Inventor： Siddharth Joshi ,  Nicolas Hotellier ,  Fei Tan ,  Anne-Laure Bavencove ,  Chin-Han Lin ,  Arnaud Laflaquiere

IPC: H01S5/183 ,  H01L27/02

Abstract: An optoelectronic device includes a silicon interposer and an array of resonant cavity mesas. The array of resonant cavity mesas is monolithically integrated in a set of one or more epitaxial layers and flip-chip bonded to the silicon interposer. The array of resonant cavity mesas includes a first subset of resonant cavity mesas connected to a first subset of conductors of the silicon interposer and biased to a first electrical polarity, and a second subset of resonant cavity mesas connected to a second subset of conductors of the silicon interposer. The second subset of resonant cavity mesas provides electrostatic discharge (ESD) protection for the first subset of resonant cavity mesas.

公开(公告)号：US20240372324A1

公开(公告)日：2024-11-07

申请号：US18143517

申请日：2023-05-04

Applicant: Apple Inc.

Inventor： Chin-Han Lin ,  Nicolas Hotellier ,  Alexander Hein ,  Siddharth Joshi ,  Fei Tan

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/0237 ,  H01S5/183

Abstract: A laser assembly includes a set of one or more substrates having a first surface opposite a second surface. The set of one or more substrates defines a resonant cavity extension. The resonant cavity extension extends into the set of one or more substrates from an opening in the first surface. The laser assembly further includes a first reflector disposed within the resonant cavity extension and configured to reflect at least one wavelength of electromagnetic radiation received through the opening back through the opening; a laser having an active region configured to generate the at least one wavelength of electromagnetic radiation; and a second reflector. The active region is disposed in a resonant cavity extending between the first reflector and the second reflector. The resonant cavity includes the resonant cavity extension.

公开(公告)号：US20250105594A1

公开(公告)日：2025-03-27

申请号：US18892108

申请日：2024-09-20

Applicant: Apple Inc.

Inventor： Pengfei Qiao ,  Fei Tan ,  Tong Chen ,  Qinghong Du ,  Siddharth Joshi ,  Nicolas Hotellier ,  Alexander Hein ,  Pierre-Antoine Delean

IPC: H01S5/183 ,  H01S5/026 ,  H01S5/042 ,  H01S5/30

Abstract: Embodiments described herein include an optoelectronic sensing device having a vertical cavity surface emitting laser (VCSEL), a resonance cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partly defined by a first set of semiconductor layers disposed on a substrate. The first set of semiconductor layers includes a first active region. The VCSEL is configured to emit laser light towards the substrate, upon application of a first bias voltage, and undergo self-mixing interference upon reception of reflections or backscatters thereof. The RCPD is vertically adjacent to the VCSEL and is at least partly defined by a second set of semiconductor layers disposed on the substrate. The second set of semiconductor layers includes a second active region. The RCPD is configured to detect, upon application of a second bias voltage, the self-mixing interference. The tunnel junction is disposed between the first active region and the second active region.

公开(公告)号：US20250102631A1

公开(公告)日：2025-03-27

申请号：US18673072

申请日：2024-05-23

Applicant: Apple Inc.

Inventor： Siddharth Joshi ,  Arnaud Laflaquiere ,  Nicolas Hotellier ,  Cristiano L. Niclass ,  Keith Lyon

IPC: G01S7/481 ,  H01S5/02 ,  H01S5/14 ,  H01S5/183 ,  H01S5/42

Abstract: Disclosed are electronic devices that include an array of light emitting diodes and photosensors formed in a single semiconductor chip. The light emitting diodes may be structured as vertical exterior cavity surface-emitting laser diodes (VECSELs). The photosensors may be formed as resonant cavity photosensors (RCPDs). The VECSELs and the RCPDs of the array may be formed in a common set of semiconductor layers of the single semiconductor chip and separated by isolation regions formed in the common set of semiconductor layers. Also disclosed are dual chip transmitter-receiver systems including a first semiconductor chip having an array of both VECSELs and RCPDs formed in common set of semiconductor layers, and a second semiconductor chip electrically connected to the first semiconductor chip and including control circuitry to enable laser emission from the VECSELs and light reception by the RCPDs.

公开(公告)号：US20240088623A1

公开(公告)日：2024-03-14

申请号：US17944213

申请日：2022-09-14

Applicant: Apple Inc.

Inventor： Siddharth Joshi ,  Keith Lyon ,  Arnaud Laflaquière ,  Christophe Verove

IPC: H01S5/042 ,  H01S5/42

CPC classification number: H01S5/042 ,  H01S5/423 ,  H01S5/343

Abstract: An integrated emitter device incudes a silicon die, including an array of control circuits, and a plurality of integrated emitter modules disposed on the silicon die. Each integrated emitter module includes a single epitaxial stack comprising multiple layers of III-V semiconductor compounds, which define a vertical emitter including an optically active layer and upper and lower distributed Bragg reflectors (DBRs) on opposing sides of the optically active layer, and a transistor in series with the vertical emitter and including a terminal in contact with a respective one of the control circuits, so as to actuate the vertical emitter in response to a control signal applied to the terminal by the respective one of the control circuits.

公开(公告)号：US20240079440A1

公开(公告)日：2024-03-07

申请号：US17903067

申请日：2022-09-06

Applicant: Apple Inc.

Inventor： Oray O. Cellek ,  Fei Tan ,  Gershon Rosenblum ,  Hong Wei Lee ,  Cheng-Ying Tsai ,  Jae Y. Park ,  Christophe Verove ,  John L Orlowski ,  Siddharth Joshi ,  Xiangli Li ,  David Coulon ,  Xiaofeng Fan ,  Keith Lyon ,  Nicolas Hotellier ,  Arnaud Laflaquière

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14652 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1465 ,  H04N5/378

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.