公开(公告)号：US20240250211A1

公开(公告)日：2024-07-25

申请号：US18408246

申请日：2024-01-09

Applicant: Apple Inc.

Inventor： Erin C. Young ,  Ling Zhang ,  David P. Bour

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/305

Abstract: Light emitting diodes with regrown semiconductor layers and methods of manufacture are described. In an embodiment, a light emitting diode includes a base structure including a first cladding layer doped with a first dopant type (e.g. n-type) and step surface. A mesa pillar including an active layer protrudes from the step surface, and a regrown second cladding layer doped with a second dopant type (e.g. p-type) is in direct contact with and spans a bottom surface and sidewalls of the mesa pillar and the step surface.