Converter employing differing switch types in parallel

    公开(公告)号:US11251622B1

    公开(公告)日:2022-02-15

    申请号:US15454324

    申请日:2017-03-09

    Applicant: Apple Inc.

    Abstract: Aspects of the present disclosure involve an inverter employing switches of different types in parallel. In one example, an apparatus includes a voltage-source converter that may have a plurality of switch positions collectively coupled to convert an input to an output. At least one switch position may include a first switch of a first switch type and a second switch of a second switch type different from the first switch type. Also, the first and second switches may be coupled in parallel. The converter may also include a switch control circuit to generate, for each of the at least one of the switch positions, a first control signal to operate the first switch of the switch position, and a second control signal to operate the second switch of the switch position.

    Deterministic shutdown of power module

    公开(公告)号:US10924101B1

    公开(公告)日:2021-02-16

    申请号:US16705110

    申请日:2019-12-05

    Applicant: Apple Inc.

    Abstract: Power semiconductor devices according to embodiments of the present technology may be operated to protect components of the semiconductor device. Methods for operation of the devices may include measuring a temperature within a source region of the semiconductor device. The methods may include measuring at the semiconductor device an amount of current associated with a short circuit external to the semiconductor device. The methods may include predicting a temperature effect within two regions of the semiconductor device based on a range of distribution of the amount of current between the two regions of the semiconductor device. The methods may include determining a particular distribution of the amount of current between the two regions of the semiconductor device. The methods may also include shutting off the semiconductor device to cause the particular distribution of current between the two regions of the semiconductor device.

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