公开(公告)号：US10707282B1

公开(公告)日：2020-07-07

申请号：US16000725

申请日：2018-06-05

Applicant: Apple Inc.

Inventor： Chih Jen Yang ,  Prashant Mandlik ,  Chia-Hao Chang ,  Chien-Chung Wang ,  Te-Hua Teng ,  Yu Cheng Chen

IPC: H01L27/32 ,  G06F3/041 ,  H01L51/52

Abstract: A display may have organic light-emitting diode pixels formed from thin-film circuitry. An organic layer including planarization layers and a pixel definition layer may overlap the thin-film circuitry. Thin-film encapsulation may overlap the organic layer. The thin-film encapsulation may be formed from an organic dielectric layer interposed between two layers of inorganic dielectric material. A strip of peripheral crack-stopper structures may run along an edge of the display and may surround the array of pixels. The crack-stopper structures may include parallel inorganic lines formed from a first inorganic layer such as an inorganic layer of the thin-film circuitry. A strip of the organic layer may overlap the parallel inorganic lines. The crack-stopper structures may have parallel tapered polymer lines. The polymer lines may be overlapped by a second inorganic dielectric layer formed from the inorganic material of the thin-film encapsulation layer.

公开(公告)号：US20180061867A1

公开(公告)日：2018-03-01

申请号：US15344045

申请日：2016-11-04

Applicant: Apple Inc.

Inventor： Chih Pang Chang ,  Jung-Fang Chang ,  ChinWei Hu ,  Te-Hua Teng ,  Jung Yen Huang ,  Wen-I Hsieh ,  Jiun-Jye Chang ,  Ching-Sang Chuang ,  Hung-Che Ting ,  Lungpao Hsin

IPC: H01L27/12

CPC classification number: H01L27/1251 ,  H01L27/1225

Abstract: Hybrid silicon TFT and oxide TFT structures and methods of formation are described. In an embodiment, a protection layer is formed over a semiconductor oxide channel layer of the oxide TFT to protect the semiconductor oxide channel layer during a cleaning operation of the silicon TFT.