公开(公告)号：US11322630B2

公开(公告)日：2022-05-03

申请号：US17010874

申请日：2020-09-03

Applicant: Apple Inc.

Inventor： Weiping Li ,  Arnaud Laflaquière ,  Chinhan Lin ,  Fei Tan ,  Tong Chen ,  Xiaolong Fang

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/0304

Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

公开(公告)号：US11418010B2

公开(公告)日：2022-08-16

申请号：US16812411

申请日：2020-03-09

Applicant: Apple Inc.

Inventor： Weiping Li ,  Arnaud Laflaquière ,  Xiaolong Fang

IPC: H01S5/042 ,  H01S5/187 ,  H01S5/183

Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.

公开(公告)号：US20200313391A1

公开(公告)日：2020-10-01

申请号：US16812411

申请日：2020-03-09

Applicant: Apple Inc.

Inventor： Weiping Li ,  Arnaud Laflaquière ,  Xiaolong Fang

IPC: H01S5/187 ,  H01S5/183

Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.

公开(公告)号：US20210091244A1

公开(公告)日：2021-03-25

申请号：US17010874

申请日：2020-09-03

Applicant: Apple Inc.

Inventor： Weiping Li ,  Arnaud Laflaquière ,  Chinhan Lin ,  Fei Tan ,  Tong Chen ,  Xiaolong Fang

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/0232

Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

公开(公告)号：US20230089141A1

公开(公告)日：2023-03-23

申请号：US17480704

申请日：2021-09-21

Applicant: Apple Inc.

Inventor： Tong Chen ,  Ahmet Fatih Cihan ,  Edward Vail ,  Weiping Li ,  Xiaolong Fang ,  Xibin Zhou ,  Pengfei Qiao

IPC: H01S5/026 ,  H01S5/42 ,  H01S5/14 ,  H01S5/0687 ,  H01S3/105 ,  H01S5/183

Abstract: Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.