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    Self-Mixing Interference Device for Sensing Applications
    2.
    发明申请
    Self-Mixing Interference Device for Sensing Applications 有权

    公开(公告)号：US20210003385A1

    公开(公告)日：2021-01-07

    申请号：US16913645

    申请日：2020-06-26

    Applicant: Apple Inc.

    Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

    IPC: G01B9/02 ,  H01S5/026 ,  H01S5/30 ,  H01S5/183 ,  H01S5/343

    Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

    VCSEL structure with embedded heat sink
    3.
    发明授权
    VCSEL structure with embedded heat sink 有权

    公开(公告)号：US10454241B2

    公开(公告)日：2019-10-22

    申请号：US16106037

    申请日：2018-08-21

    Applicant: APPLE INC.

    Inventor： Tongbi T. Jiang ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/024 ,  H01S5/42 ,  H01S5/042 ,  H01S5/183 ,  H01S5/02 ,  H01S5/026

    Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

    Creating arbitrary patterns on a 2-D uniform grid VCSEL array
    5.
    发明授权
    Creating arbitrary patterns on a 2-D uniform grid VCSEL array 有权

    公开(公告)号：US10153614B1

    公开(公告)日：2018-12-11

    申请号：US15844662

    申请日：2017-12-18

    Applicant: APPLE INC.

    Inventor： Chin Han Lin ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01L29/26 ,  H01S5/183 ,  H01L29/15 ,  H01S5/026 ,  H01S5/187 ,  H01S5/42 ,  H01S5/042

    Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

    High-efficiency vertical emitters with improved heat sinking
    7.
    发明申请
    High-efficiency vertical emitters with improved heat sinking 有权
    高效率垂直发射器，具有改善的散热

    公开(公告)号：US20160336717A1

    公开(公告)日：2016-11-17

    申请号：US15019981

    申请日：2016-02-10

    Applicant: Apple Inc.

    Inventor： Chin Han Lin ,  Kevin A. Sawyer ,  Neil MacKinnon ,  Venkataram R. Raju ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/024 ,  H01S5/183 ,  H01S5/30 ,  H01S5/00

    CPC classification number: H01S5/02469 ,  H01S5/0042 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/423

    Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.

    Abstract translation: 制造光电器件的方法包括在半导体衬底上制造多个垂直发射极。 发射器的各个顶表面被结合到散热器，之后半导体衬底在发射器的相应底表面之下移除。 阳极和阴极触点均附接到底表面，以便驱动发射器从底表面发光。 在另一个实施例中，将半导体衬底的上表面接合到具有与发射器的各个顶表面对准的通孔的载体衬底上，然后在发射器的相应底表面之下移除半导体衬底，并且分别 发射器的底表面结合到散热器。

    Creating arbitrary patterns on a 2-D uniform grid VCSEL array
    9.
    发明申请
    Creating arbitrary patterns on a 2-D uniform grid VCSEL array 审中-公开

    公开(公告)号：US20200266608A1

    公开(公告)日：2020-08-20

    申请号：US16867594

    申请日：2020-05-06

    Applicant: APPLE INC.

    Inventor： Chin Han Lin ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/183 ,  H01S5/042 ,  H01S5/42 ,  H01S5/187 ,  H01S5/026 ,  H01L29/15

    Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

    VCSEL structure with embedded heat sink
    10.
    发明授权
    VCSEL structure with embedded heat sink 有权

    公开(公告)号：US10103512B2

    公开(公告)日：2018-10-16

    申请号：US15641244

    申请日：2017-07-04

    Applicant: APPLE INC.

    Inventor： Tongbi T. Jiang ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/024 ,  H01S5/42 ,  H01S5/042 ,  H01S5/183

    Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

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