公开(公告)号：US20210111000A1

公开(公告)日：2021-04-15

申请号：US17107029

申请日：2020-11-30

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Abdul Aziz Khaja ,  Amit Kumar Bansal ,  Kwangduk Douglas Lee ,  Xing Lin ,  Jianhua Zhou ,  Addepalli Sai Susmita ,  Juan Carlos Rocha-Alvarez

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/509 ,  H01L21/67 ,  H01L21/683

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.