NITROGEN OXIDE ABATEMENT IN SEMICONDUCTOR FABRICATION
    1.
    发明申请
    NITROGEN OXIDE ABATEMENT IN SEMICONDUCTOR FABRICATION 审中-公开
    半导体制造中的氮氧化物消耗

    公开(公告)号:US20160276179A1

    公开(公告)日:2016-09-22

    申请号:US14418411

    申请日:2014-12-18

    CPC classification number: H01L21/67017 B01D53/346 B01D53/56 B01D53/76

    Abstract: Embodiments enclosed herein relate to methods and apparatus for reducing nitrogen oxides (NOx) produced during processing, such as during semiconductor fabrication processing. A processing system may include an abatement controller and an effluent abatement system, wherein the abatement controller controls the effluent abatement system to reduce NOx production, while ensuring abatement of the effluent gases from the processing system. The effluent abatement system may include a combustion-type effluent abatement system and/or a plasma-type effluent abatement system. The abatement controller may select operating modes of the effluent abatement systems to reduce NOx production.

    Abstract translation: 本文包括的实施例涉及用于还原在加工期间产生的氮氧化物(NOx)的方法和装置,例如在半导体制造处理期间。 处理系统可以包括减排控制器和污水消除系统,其中减排控制器控制污水排放系统以减少NOx产生,同时确保减少来自处理系统的废气。 废水排放系统可以包括燃烧型流出物排放系统和/或等离子体型排出物排放系统。 减排控制器可以选择排污系统的运行模式以减少NOx的产生。

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