公开(公告)号：US20220108908A1

公开(公告)日：2022-04-07

申请号：US17064470

申请日：2020-10-06

Applicant: Applied Materials, Inc.

Inventor： Karthik Elumalai ,  Eng Sheng Peh ,  Michael Sorensen ,  Sriskantharajah Thirunavukarasu ,  Arunkumar Tatti

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/305

Abstract: Shadow ring kits and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber, the electrostatic chuck including a conductive pedestal to support a substrate carrier sized to support a wafer having a first diameter. A shadow ring assembly is between the plasma source and the electrostatic chuck, the shadow ring assembly sized to process a wafer having a second diameter smaller than the first diameter.

公开(公告)号：US12068159B2

公开(公告)日：2024-08-20

申请号：US17219082

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Karthik Narayanan Balakrishnan ,  Jungrae Park ,  Arunkumar Tatti ,  Sriskantharajah Thirunavukarasu ,  Eng Sheng Peh

IPC: H01L21/033 ,  B23K26/14 ,  B23K26/142 ,  B23K101/40 ,  H01L21/78

CPC classification number: H01L21/0337 ,  B23K26/142 ,  B23K26/1436 ,  B23K26/1437 ,  H01L21/78 ,  B23K2101/40

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.