公开(公告)号：US20240339316A1

公开(公告)日：2024-10-10

申请号：US18746799

申请日：2024-06-18

Applicant: Applied Materials, Inc.

Inventor： Aykut AYDIN ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Abhijit Basu MALLICK ,  Takehito KOSHIZAWA ,  Bo QI

IPC: H01L21/02

CPC classification number: H01L21/02123 ,  H01L21/02211 ,  H01L21/02271

Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

公开(公告)号：US20220406594A1

公开(公告)日：2022-12-22

申请号：US17352039

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Aykut AYDIN ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Abhijit B. MALLICK ,  Takehito KOSHIZAWA ,  Bo QI

IPC: H01L21/02

Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.