公开(公告)号：US20210043455A1

公开(公告)日：2021-02-11

申请号：US16982789

申请日：2019-03-21

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya Teja Babu THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/46 ,  H01L21/02 ,  C23C16/26

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

公开(公告)号：US20250022709A1

公开(公告)日：2025-01-16

申请号：US18899930

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/46 ,  C23C16/505 ,  H01L21/02

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C. and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300° C. to about 700° C. and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 Å/min, such as up to about 10,000 Å/min or faster.

公开(公告)号：US20200321197A1

公开(公告)日：2020-10-08

申请号：US16806852

申请日：2020-03-02

Applicant: Applied Materials, Inc.

Inventor： Ren-Guan DUAN ,  Juan Carlos ROCHA-ALVAREZ ,  Bushra AFZAL

IPC: H01J37/32 ,  H01J9/24

Abstract: A method of forming a radio frequency (RF) strap for use in a process chamber is provided. The method includes positioning a core strap including a first material that is electrically and thermally conductive in a first electrochemical bath. The first electrochemical bath includes a first solvent and a first plating precursor. The method further includes forming a first protective coating on an outer surface of the core strap, removing the first solvent and the first plating precursor from the core strap having the first protective coating formed thereon, post-treating the core strap having the first protective coating formed thereon, positioning the core strap having the first protective coating formed thereon in a second electrochemical bath, and forming a second protective coating on an outer surface of the first protective coating. The first protective coating includes nickel, the second electrochemical bath includes a second solvent and a second plating precursor, and the second protective coating includes gold.