公开(公告)号：US20230151487A1

公开(公告)日：2023-05-18

申请号：US18099371

申请日：2023-01-20

Applicant: Applied Materials, Inc.

Inventor： Liangfa HU ,  Prashant Kumar KULSHRESHTHA ,  Anjana M. PATEL ,  Abdul Aziz KHAJA ,  Viren KALSEKAR ,  Vinay K. PRABHAKAR ,  Satya Teja Babu THOKACHICHU ,  Byung Seok KWON ,  Ratsamee LIMDULPAIBOON ,  Kwangduk Douglas LEE ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/455 ,  C23C16/505 ,  C23C16/45597 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45519

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

公开(公告)号：US20250022709A1

公开(公告)日：2025-01-16

申请号：US18899930

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/46 ,  C23C16/505 ,  H01L21/02

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C. and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300° C. to about 700° C. and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 Å/min, such as up to about 10,000 Å/min or faster.

公开(公告)号：US20200373132A1

公开(公告)日：2020-11-26

申请号：US16814736

申请日：2020-03-10

Applicant: Applied Materials, Inc.

Inventor： Viren KALSEKAR ,  Vinay K. PRABHAKAR ,  Venkata Sharat Chandra PARIMI

IPC: H01J37/32 ,  H01L21/683

Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.

公开(公告)号：US20230170190A1

公开(公告)日：2023-06-01

申请号：US18102055

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01J37/32715 ,  H01J37/32082 ,  H01L21/6831 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01L21/02274 ,  H01L21/02636 ,  H01L21/28506 ,  H01J2237/2007 ,  H01J2237/332

Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

公开(公告)号：US20210066039A1

公开(公告)日：2021-03-04

申请号：US16988466

申请日：2020-08-07

Applicant: Applied Materials, Inc.

Inventor： Jian LI ,  Viren KALSEKAR ,  Paul BRILLHART ,  Juan Carlos ROCHA-ALVAREZ ,  Vinay K. PRABHAKAR

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/505 ,  C23C16/458 ,  C23C16/46

Abstract: One or more embodiments described herein generally relate to a semiconductor processing apparatus that utilizes high radio frequency (RF) power to improve uniformity. The semiconductor processing apparatus includes an RF powered primary mesh and an RF powered secondary mesh, which are disposed in a substrate supporting element. The secondary RF mesh is positioned underneath the primary RF mesh. A connection assembly is configured to electrically couple the secondary mesh to the primary mesh. RF current flowing out of the primary mesh is distributed into multiple connection junctions. As such, even at high total RF power/current, a hot spot on the primary mesh is prevented because the RF current is spread to the multiple connection junctions. Accordingly, there is less impact on substrate temperature and film non-uniformity, allowing much higher RF power to be used without causing a local hot spot on the substrate being processed.

公开(公告)号：US20210043455A1

公开(公告)日：2021-02-11

申请号：US16982789

申请日：2019-03-21

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya Teja Babu THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/46 ,  H01L21/02 ,  C23C16/26

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

公开(公告)号：US20210017645A1

公开(公告)日：2021-01-21

申请号：US17040788

申请日：2019-04-09

Applicant: Applied Materials, Inc.

Inventor： Lu XU ,  Byung Seok KWON ,  Viren KALSEKAR ,  Vinay K. PRABHAKAR ,  Prashant Kumar KULSHRESHTHA ,  Dong Hyung LEE ,  Kwangduk Douglas LEE

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/04 ,  C23C16/455 ,  C23C16/26

Abstract: Embodiments of the present invention generally relate to an apparatus for reducing arcing during thick film deposition in a plasma process chamber. In one embodiment, an edge ring including an inner edge diameter that is about 0.28 inches to about 0.38 inches larger than an outer diameter of a substrate is utilized when depositing a thick (greater than two microns) layer on the substrate. The layer may be a dielectric layer, such as a carbon hard mask layer, for example an amorphous carbon layer. With the 0.14 inches to 0.19 inches gap between the outer edge of substrate and the inner edge of the edge ring during the deposition of the thick layer, substrate support surface arcing is reduced while the layer thickness uniformity is maintained.

公开(公告)号：US20230147452A1

公开(公告)日：2023-05-11

申请号：US18092421

申请日：2023-01-02

Applicant: Applied Materials, Inc.

Inventor： Viren KALSEKAR ,  Vinay K. PRABHAKAR ,  Venkata Sharat Chandra PARIMI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/32174 ,  H01L21/6833 ,  H01J2237/24564

Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.

公开(公告)号：US20190341232A1

公开(公告)日：2019-11-07

申请号：US16391996

申请日：2019-04-23

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

公开(公告)号：US20190341227A1

公开(公告)日：2019-11-07

申请号：US16403489

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Sarah Michelle BOBEK ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C16/509 ,  C23C16/46

Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.