公开(公告)号：US20040077178A1

公开(公告)日：2004-04-22

申请号：US10273802

申请日：2002-10-17

Applicant: Applied Materials, Inc.

Inventor： Chan-Syun Yang ,  Anisul H. Khan ,  Ajay Kumar ,  Padmapani C. Nallan

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00404 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method for laterally etching a structure on a semiconductor substrate comprising depositing a protective mask that thins towards a bottom of the structure and lateral etching a wall of the structure to form a notch or to release the structure.

Abstract translation: 一种用于横向蚀刻半导体衬底上的结构的方法，包括沉积朝向所述结构的底部的保护掩模，并横向蚀刻所述结构的壁以形成凹口或释放所述结构。

公开(公告)号：US20040018647A1

公开(公告)日：2004-01-29

申请号：US10374464

申请日：2003-02-24

Applicant: Applied Materials, Inc.

Inventor： Steven J. Jones ,  Shashank C. Deshmukh ,  Matthew F. Davis ,  Lei Lian ,  Chan-Syun Yang

IPC: H01L021/336 ,  H01L021/00

CPC classification number: H01L21/67253 ,  H01J37/32935 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/32137 ,  H01L21/67069

Abstract: A method and apparatus for controlling lateral etching during an etching process. The method and apparatus includes laterally etching a lower layer of a stack of layers in a processing chamber, where an endpoint detection system radiates a spectrum of light over the lower layer being etched and an area over the stack of layers proximate to the lower layer being etched. The intensity of light reflected from at least one of the stacked layers positioned lateral to the lower layer being etched is then measured. An endpoint detection system terminates the etching process upon measuring a predetermined metric associated with the intensity of reflected light from the at least one of the stacked layers.

Abstract translation: 一种用于在蚀刻工艺期间控制横向蚀刻的方法和装置。 所述方法和装置包括在处理室中横向蚀刻层叠层的下层，其中端点检测系统在被蚀刻的下层上辐射光谱，并且靠近下层的层叠层上的区域是 蚀刻。 然后测量从被蚀刻的下层位于两侧的堆叠层中的至少一个反射的光的强度。 端点检测系统在测量与来自至少一个堆叠层的反射光的强度相关联的预定度量时终止蚀刻工艺。