METHOD OF COOLING A DEPOSITION SOURCE, CHAMBER FOR COOLING A DEPOSITION SOURCE AND DEPOSITION SYSTEM

    公开(公告)号:US20200332413A1

    公开(公告)日:2020-10-22

    申请号:US16759696

    申请日:2017-11-16

    Abstract: A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)].

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