PASSIVE CONTROL FOR THROUGH SILICON VIA TILT IN ICP CHAMBER
    1.
    发明申请
    PASSIVE CONTROL FOR THROUGH SILICON VIA TILT IN ICP CHAMBER 审中-公开
    通过在ICP室中倾斜的硅进行被动控制

    公开(公告)号:US20140273460A1

    公开(公告)日:2014-09-18

    申请号:US14185579

    申请日:2014-02-20

    Abstract: Embodiments of the present disclosure generally provide apparatus and methods for improving process result near the edge region of a substrate being processed. One embodiment of the present disclosure provides a cover ring for improving process uniformity. The cover ring includes a ring shaped body, and an extended lip extending radially inwards from the ring shaped body. An inner edge of the extended lip forms a central opening to expose a processing region on a substrate being processed, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening.

    Abstract translation: 本公开的实施例通常提供用于改善在被处理的衬底的边缘区域附近的处理结果的装置和方法。 本公开的一个实施例提供了一种用于改善工艺均匀性的盖环。 盖环包括环形体和从环形体径向向内延伸的延伸唇缘。 延伸唇部的内边缘形成中央开口以暴露正在被处理的基底上的处理区域,并且延伸唇缘的宽度在中心开口的半径的约15%至约20%之间。

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