公开(公告)号：US20180254203A1

公开(公告)日：2018-09-06

申请号：US15448090

申请日：2017-03-02

Applicant: Applied Materials, Inc.

Inventor： Saravjeet SINGH ,  Alan TSO ,  Tae Won KIM

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  H01L21/67109 ,  H01L21/67201

Abstract: The present disclosure generally relates to apparatuses and methods for reducing particle contamination on substrate surfaces. In one example, the apparatus is embodied as a load lock chamber including a top heater liner disposed over and coupled to a heater pedestal. The top heater liner generally includes a top plate and one or more walls, which support the top heater liner over the heater pedestal. Since the top heater liner is in contact with the heater pedestal, the top heater liner is generally heated to a temperature at which contaminating particles are volatile, such as greater than about 100° C. In operation, volatile fluorine passing through or adjacent to the hot top heater liner remains in gaseous form and thus are pumped out of the load lock chamber. The top heater liner thus advantageously reduces the potential for contaminating particles depositing on the substrate surface and improves overall production yield.

公开(公告)号：US20190051499A1

公开(公告)日：2019-02-14

申请号：US15671909

申请日：2017-08-08

Applicant: Applied Materials, Inc.

Inventor： Deepak Doddabelavangala SRIKANTAIAH ,  Sheshraj L. TULSHIBAGWALE ,  Saravjeet SINGH ,  Alexander TAM

IPC: H01J37/32 ,  B05B1/00 ,  B05B1/18

Abstract: Embodiments of the disclosure relate to a multi-plate faceplate having a first plate and a second plate. The first plate has a plurality of first plate openings. The second plate has a first surface, an opposed second surface and a plurality of second plate openings extending therethrough. The first surface is mechanically coupled to the first plate. A second plate opening has a conical portion configured to be fluidly coupled to a first plate opening and decreasing in cross-section in the depth direction thereof from the second surface. A surface of the conical portion is coated with a protective coating adjacent to the first and second surfaces. In another embodiment, the first plate has a protrusion extending therefrom into a recess formed inwardly of the first surface. The protrusion has a passage extending therethrough fluidly connected to the recess, which is fluidly connected to the second plate opening.

公开(公告)号：US20160181067A1

公开(公告)日：2016-06-23

申请号：US15055032

申请日：2016-02-26

Applicant: Applied Materials, Inc.

Inventor： Saravjeet SINGH ,  Graeme Jamieson SCOTT ,  Ajay KUMAR

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334

Abstract: Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.

Abstract translation: 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽 设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。

公开(公告)号：US20140273460A1

公开(公告)日：2014-09-18

申请号：US14185579

申请日：2014-02-20

Applicant: Applied Materials, Inc.

Inventor： David REYLAND ,  Dung Huu LE ,  Saravjeet SINGH ,  Madhava Rao YALAMANCHILI

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/76805 ,  H01L21/30655 ,  H01L21/68735 ,  H01L21/76898

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for improving process result near the edge region of a substrate being processed. One embodiment of the present disclosure provides a cover ring for improving process uniformity. The cover ring includes a ring shaped body, and an extended lip extending radially inwards from the ring shaped body. An inner edge of the extended lip forms a central opening to expose a processing region on a substrate being processed, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening.

Abstract translation: 本公开的实施例通常提供用于改善在被处理的衬底的边缘区域附近的处理结果的装置和方法。 本公开的一个实施例提供了一种用于改善工艺均匀性的盖环。 盖环包括环形体和从环形体径向向内延伸的延伸唇缘。 延伸唇部的内边缘形成中央开口以暴露正在被处理的基底上的处理区域，并且延伸唇缘的宽度在中心开口的半径的约15％至约20％之间。

公开(公告)号：US20250022755A1

公开(公告)日：2025-01-16

申请号：US18898420

申请日：2024-09-26

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng LEI ,  Brad EATON ,  Madhava Rao YALAMANCHILI ,  Saravjeet SINGH ,  Ajay KUMAR ,  James M. HOLDEN

IPC: H01L21/822 ,  B23K26/36 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67 ,  H01L21/683 ,  H01L21/78 ,  H01L23/544

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

公开(公告)号：US20190096634A1

公开(公告)日：2019-03-28

申请号：US16203342

申请日：2018-11-28

Applicant: Applied Materials, Inc.

Inventor： Saravjeet SINGH ,  Graeme Jamieson SCOTT ,  Amitabh SABHARWAL ,  Ajay KUMAR

IPC: H01J37/32

Abstract: Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.

公开(公告)号：US20140256148A1

公开(公告)日：2014-09-11

申请号：US14284088

申请日：2014-05-21

Applicant: Applied Materials, Inc.

Inventor： Roy C. NANGOY ,  Saravjeet SINGH ,  Jon C. FARR ,  Sharma V. PAMARTHY ,  Ajay KUMAR

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/45508 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32458 ,  H01L21/30655 ,  H01L21/67069

Abstract: Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.

Abstract translation: 本公开的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。 本公开的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。 处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

公开(公告)号：US20150364347A1

公开(公告)日：2015-12-17

申请号：US14730192

申请日：2015-06-03

Applicant: Applied Materials, Inc.

Inventor： Khiem NGUYEN ,  Saravjeet SINGH ,  Amitabh SABHARWAL

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/68742 ,  C23C16/458 ,  H01J37/32715 ,  H01J37/32788

Abstract: The present disclosure provides a substrate support assembly includes a substrate pedestal having an upper surface for receiving and supporting a substrate, a cover plate disposed on the substrate support pedestal, and two or more lift pins movably disposed through the substrate support pedestal and the cover plate. The cover plate includes a disk body having a central opening. The two or more lift pins are self supportive. Each of the two or more lift pins comprises one or more contact pads, and the contact pads of the lift pins extend into to the central opening of the cover plate to receive and support a substrate at an edge region of the substrate.

Abstract translation: 本公开提供了一种基板支撑组件，其包括具有用于接收和支撑基板的上表面的基板支座，设置在基板支撑基座上的盖板和可移动地设置穿过基板支撑基座的盖板和盖板 。 盖板包括具有中心开口的盘体。 两个或更多个升降针是自支撑的。 两个或更多个提升销中的每一个包括一个或多个接触垫，并且提升销的接触垫延伸到盖板的中心开口中，以在衬底的边缘区域处接收和支撑衬底。