公开(公告)号：US20230309300A1

公开(公告)日：2023-09-28

申请号：US17705135

申请日：2022-03-25

Applicant: Applied Materials, Inc.

Inventor： Dimitrios Pavlopoulos ,  Rui Cheng ,  Qinghua Zhao ,  Karthik Janakiraman

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/02

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L21/02208

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. Alternating layers of material may be formed on the substrate. One or more recesses may be formed in the alternating layers of material. The methods may include forming a first silicon-containing material. The first silicon-containing material may extend into the one or more recesses formed in the alternating layers of material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a silicon-and-halogen-containing material. The silicon-and-halogen-containing material may overly the first silicon-containing material. The methods may include forming a second silicon-containing material. The second silicon-containing material may overly the silicon-and-halogen-containing material.