公开(公告)号：US20240332003A1

公开(公告)日：2024-10-03

申请号：US18128049

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Guoqing Li ,  Rui Cheng

IPC: H01L21/02 ,  C23C16/14 ,  H01J37/32

CPC classification number: H01L21/02175 ,  C23C16/14 ,  H01J37/32146 ,  H01J37/32155 ,  H01J2237/332

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber, the deposition precursors may be or include a tungsten-containing precursor. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the one or more deposition precursors in the processing region. The plasma may be at least partially formed by an RF power operating at less than or about 3,000 W and at a pulsing frequency less than or about 100,000 Hz. The methods may include forming a layer of material on the substrate. The layer of material may be or include a tungsten-containing material.

公开(公告)号：US20230340661A1

公开(公告)日：2023-10-26

申请号：US18216138

申请日：2023-06-29

Applicant: Applied Materials, Inc

Inventor： Rui Cheng ,  Guoqing Li ,  Qinghua Zhao

IPC: C23C16/04 ,  H01L21/02 ,  C23C16/32 ,  H01J37/32

CPC classification number: C23C16/045 ,  H01L21/0228 ,  H01L21/02274 ,  C23C16/32 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/334

Abstract: Methods for forming a metal carbide liner in features formed in a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a metal carbide liner in the feature of the substrate surface with a plurality of high-frequency ratio-frequency (HFRF) pulses. Semiconductor devices with the metal carbide liner and methods for filling gaps using the metal carbide liner are also described.

公开(公告)号：US12142480B2

公开(公告)日：2024-11-12

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US20250037996A1

公开(公告)日：2025-01-30

申请号：US18913024

申请日：2024-10-11

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US20230051200A1

公开(公告)日：2023-02-16

申请号：US17399702

申请日：2021-08-11

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/762

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing layer on surfaces defining the processing region of the semiconductor processing chamber. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20230050255A1

公开(公告)日：2023-02-16

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US20230309300A1

公开(公告)日：2023-09-28

申请号：US17705135

申请日：2022-03-25

Applicant: Applied Materials, Inc.

Inventor： Dimitrios Pavlopoulos ,  Rui Cheng ,  Qinghua Zhao ,  Karthik Janakiraman

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/02

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L21/02208

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. Alternating layers of material may be formed on the substrate. One or more recesses may be formed in the alternating layers of material. The methods may include forming a first silicon-containing material. The first silicon-containing material may extend into the one or more recesses formed in the alternating layers of material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a silicon-and-halogen-containing material. The silicon-and-halogen-containing material may overly the first silicon-containing material. The methods may include forming a second silicon-containing material. The second silicon-containing material may overly the silicon-and-halogen-containing material.