公开(公告)号：US20220076915A1

公开(公告)日：2022-03-10

申请号：US17015545

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Venkataramana R. Chavva ,  KyuHa Shim ,  Hans Gossmann ,  Edwin Arevalo ,  Scott Falk ,  Rajesh Prasad

IPC: H01J37/20 ,  H01L21/265 ,  H01L21/225 ,  H01J37/317

Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles.

公开(公告)号：US11551904B2

公开(公告)日：2023-01-10

申请号：US17015545

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Venkataramana R. Chavva ,  KyuHa Shim ,  Hans Gossmann ,  Edwin Arevalo ,  Scott Falk ,  Rajesh Prasad

IPC: H01J37/20 ,  H01L21/265 ,  H01J37/317 ,  H01L21/225 ,  H01J37/05 ,  H01J37/08

Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles.