公开(公告)号：US12112949B2

公开(公告)日：2024-10-08

申请号：US17963059

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US11551904B2

公开(公告)日：2023-01-10

申请号：US17015545

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Venkataramana R. Chavva ,  KyuHa Shim ,  Hans Gossmann ,  Edwin Arevalo ,  Scott Falk ,  Rajesh Prasad

IPC: H01J37/20 ,  H01L21/265 ,  H01J37/317 ,  H01L21/225 ,  H01J37/05 ,  H01J37/08

Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles.

公开(公告)号：US11201057B2

公开(公告)日：2021-12-14

申请号：US16512734

申请日：2019-07-16

Applicant: APPLIED Materials, Inc.

Inventor： Scott Falk ,  Jun-Feng Lu ,  Qintao Zhang

IPC: H01L21/265 ,  H01L21/302 ,  H01L21/02 ,  H01L21/322 ,  H01L21/3115 ,  H01L23/00

Abstract: A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.

公开(公告)号：US11875995B2

公开(公告)日：2024-01-16

申请号：US17522100

申请日：2021-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Scott Falk ,  Jun-Feng Lu ,  Qintao Zhang

IPC: H01L21/265 ,  H01L21/302 ,  H01J37/317 ,  H01L21/322 ,  H01L21/3115 ,  H01L23/00 ,  H01L21/02

CPC classification number: H01L21/265 ,  H01L21/0217 ,  H01L21/02351 ,  H01L21/302 ,  H01L21/31155 ,  H01L21/322 ,  H01L23/562 ,  H01J37/3171

Abstract: A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.

公开(公告)号：US20220076915A1

公开(公告)日：2022-03-10

申请号：US17015545

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Venkataramana R. Chavva ,  KyuHa Shim ,  Hans Gossmann ,  Edwin Arevalo ,  Scott Falk ,  Rajesh Prasad

IPC: H01J37/20 ,  H01L21/265 ,  H01L21/225 ,  H01J37/317

Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles.

公开(公告)号：US20220068648A1

公开(公告)日：2022-03-03

申请号：US17522100

申请日：2021-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Scott Falk ,  Jun-Feng LU ,  Qintao Zhang

IPC: H01L21/265 ,  H01L21/322 ,  H01L21/302 ,  H01L21/3115 ,  H01L23/00 ,  H01L21/02

Abstract: A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.

公开(公告)号：US12014927B2

公开(公告)日：2024-06-18

申请号：US17963841

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US11469107B2

公开(公告)日：2022-10-11

申请号：US16939316

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.