公开(公告)号：US08999821B2

公开(公告)日：2015-04-07

申请号：US14269417

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Adam Brand ,  Bingxi Wood ,  Errol Sanchez ,  Yihwan Kim ,  Yi-Chiau Huang ,  John Boland

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/0262 ,  H01L29/66795

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract translation: 描述形成场效应晶体管的鳍结构的方法。 所述方法可以包括将芯棒图案化在衬底的表面上，以及在图案化心轴的暴露表面上沉积高迁移率沟道材料外延层的操作。 外延层在图案化心轴的相邻列之间留下间隙，并且介电材料可以沉积在图案化心轴的相邻列之间的间隙中。 所述方法还可以包括平坦化外延层以形成平坦化的外延层并暴露图案化心轴的列，以及蚀刻图案化心轴和电介质材料的暴露的柱的至少一部分，以暴露出至少一部分 形成翅片结构的平坦化外延层。

公开(公告)号：US20150050800A1

公开(公告)日：2015-02-19

申请号：US14269417

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Adam Brand ,  Bingxi Wood ,  Errol Sanchez ,  Yihwan Kim ,  Yi-Chiau Huang ,  John Boland

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/0262 ,  H01L29/66795

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract translation: 描述形成场效应晶体管的鳍结构的方法。 所述方法可以包括将芯棒图案化在衬底的表面上，以及在图案化心轴的暴露表面上沉积高迁移率沟道材料外延层的操作。 外延层在图案化心轴的相邻列之间留下间隙，并且介电材料可以沉积在图案化心轴的相邻列之间的间隙中。 所述方法还可以包括平坦化外延层以形成平坦化的外延层并暴露图案化心轴的列，以及蚀刻图案化心轴和电介质材料的暴露的柱的至少一部分，以暴露出至少一部分 形成翅片结构的平坦化外延层。