IN-SITU ETCH RATE DETERMINATION FOR CHAMBER CLEAN ENDPOINT
    3.
    发明申请
    IN-SITU ETCH RATE DETERMINATION FOR CHAMBER CLEAN ENDPOINT 有权
    用于室内清洁端点的现场测量速率测定

    公开(公告)号:US20160314944A1

    公开(公告)日:2016-10-27

    申请号:US15136788

    申请日:2016-04-22

    CPC classification number: H01J37/32963 H01J2237/334

    Abstract: Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.

    Abstract translation: 本文描述的实施例涉及用于确定清洁端点的方法。 可以在清洁室环境中执行第一等离子体清洁过程,以确定由第一斜率限定的清洁时间函数。 可以在不洁室的环境中进行第二等离子体清洗过程,以确定由第二斜率限定的清洁时间函数。 可以比较第一和第二斜率以确定干净的端点时间。

    HEATER SUPPORT KIT FOR BEVEL ETCH CHAMBER
    5.
    发明申请

    公开(公告)号:US20190272991A1

    公开(公告)日:2019-09-05

    申请号:US16419813

    申请日:2019-05-22

    Abstract: Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.

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