公开(公告)号：US20240401189A1

公开(公告)日：2024-12-05

申请号：US18671184

申请日：2024-05-22

Applicant: Applied Materials, Inc.

Inventor： Hsiang Yu LEE ,  Changwoo SUN ,  Milan PESIC ,  Pradeep SUBRAHMANYAN

IPC: C23C16/04 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40

Abstract: Disclosed are approaches for to fabricating memory device channel holes using a doped film layer. One approach may include providing a substrate and forming a vertical stack over the substrate, wherein the vertical stack includes a plurality of alternating material layers. The method may further include forming a channel hole through the vertical stack, forming an oxide-nitride-oxide layer along a sidewall of the channel hole, forming a silicon layer over the oxide-nitride-oxide layer, forming an etch stop layer over the silicon layer, forming a fluorine-doped silicon layer over the etch step layer, and annealing the vertical stack.