公开(公告)号：US11275300B2

公开(公告)日：2022-03-15

申请号：US16502749

申请日：2019-07-03

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Shuwei Liu ,  Hui Ni Grace Fong ,  Ke Chang ,  Vibhu Jindal

IPC: G03F1/22 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.

公开(公告)号：US20200026178A1

公开(公告)日：2020-01-23

申请号：US16512693

申请日：2019-07-16

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Hui Ni Grace Fong ,  Binni Varghese ,  Shuwei Liu ,  Abbas Rastegar

IPC: G03F1/24 ,  G03F1/54 ,  C23C16/02

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from an alloy of tantalum and nickel.

公开(公告)号：US20200012183A1

公开(公告)日：2020-01-09

申请号：US16502749

申请日：2019-07-03

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Shuwei Liu ,  Hui Ni Grace Fong ,  Ke Chang ,  Vibhu Jindal

IPC: G03F1/22 ,  B01J23/28 ,  G21K1/06

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.