公开(公告)号：US09960035B2

公开(公告)日：2018-05-01

申请号：US15399614

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US11275300B2

公开(公告)日：2022-03-15

申请号：US16502749

申请日：2019-07-03

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Shuwei Liu ,  Hui Ni Grace Fong ,  Ke Chang ,  Vibhu Jindal

IPC: G03F1/22 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.

公开(公告)号：US09548200B2

公开(公告)日：2017-01-17

申请号：US14322484

申请日：2014-07-02

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract translation: 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。

公开(公告)号：US10957590B2

公开(公告)日：2021-03-23

申请号：US16669082

申请日：2019-10-30

Applicant: Applied Materials, Inc.

Inventor： Wenhui Wang ,  Huixiong Dai ,  Christopher S. Ngai ,  Liqi Wu ,  Wenyu Zhang ,  Yongmei Chen ,  Hao Chen ,  Keith Tatseun Wong ,  Ke Chang

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

公开(公告)号：US20200012183A1

公开(公告)日：2020-01-09

申请号：US16502749

申请日：2019-07-03

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Shuwei Liu ,  Hui Ni Grace Fong ,  Ke Chang ,  Vibhu Jindal

IPC: G03F1/22 ,  B01J23/28 ,  G21K1/06

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.