-
公开(公告)号:US20230386833A1
公开(公告)日:2023-11-30
申请号:US17824889
申请日:2022-05-25
发明人: Liqi Wu , Feng Q. Liu , Bhaskar Jyoti Bhuyan , James Hugh Connolly , Zhimin Qi , Jie Zhang , Wei Dou , Aixi Zhang , Mark Saly , Jiang Lu , Rongjun Wang , David Thompson , Xianmin Tang
IPC分类号: H01L21/027 , C23C14/16 , H01L21/3213 , H01L21/768
CPC分类号: H01L21/0271 , C23C14/16 , H01L21/32139 , H01L21/76877 , H01L21/76816 , H01L21/76831
摘要: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.