公开(公告)号：US20240371613A1

公开(公告)日：2024-11-07

申请号：US18654221

申请日：2024-05-03

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Janisht Golcha ,  Sanjeev Baluja ,  Srinivas Gandikota ,  Yixiong Yang

IPC: H01J37/32 ,  C23C16/455

Abstract: Semiconductor manufacturing processing chambers having an RF isolator between the support ring and the showerhead and/or an RF gasket between the showerhead and the gas funnel are described. A cap insert with a cap housing around the cap insert is on the gas funnel and an RF feed is in contact with the showerhead. A substrate support can be included and may have an RF return path directed through the substrate support.

公开(公告)号：US20230008986A1

公开(公告)日：2023-01-12

申请号：US17861395

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Prahallad Iyengar ,  Sanjeev Baluja ,  Kartik Shah ,  Chaowei Wang ,  Janisht Golcha ,  Eric J. Hoffmann ,  Joseph AuBuchon ,  Ashutosh Agarwal ,  Lin Sun ,  Cong Trinh

IPC: C23C16/455

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.