公开(公告)号：US12084771B2

公开(公告)日：2024-09-10

申请号：US17189963

申请日：2021-03-02

Applicant: Applied Materials, Inc.

Inventor： Zohreh Razavi Hesabi ,  Cong Trinh ,  Kevin Griffin ,  Alexander V. Garachtchenko ,  Kenric Choi ,  Vipin Jose ,  Saloni Sawalkar ,  Maribel Maldonado-Garcia ,  Kendrick H. Chaney

IPC: G05D9/12 ,  C23C16/455 ,  C23C16/52 ,  G01F23/00 ,  H01L21/66 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/45544 ,  G01F23/0007 ,  G05D9/12 ,  H01L21/67253 ,  H01L22/10

Abstract: An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

公开(公告)号：US20220406595A1

公开(公告)日：2022-12-22

申请号：US17355154

申请日：2021-06-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Doreen Wei Ying Yong ,  John Sudijono ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Muthukumar Kaliappan ,  Yingqian Chen ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220230874A1

公开(公告)日：2022-07-21

申请号：US17151240

申请日：2021-01-18

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20210032749A1

公开(公告)日：2021-02-04

申请号：US16941843

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC: C23C16/455 ,  C23C16/02

Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

公开(公告)号：US20180076023A1

公开(公告)日：2018-03-15

申请号：US15805831

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

公开(公告)号：US20160099143A1

公开(公告)日：2016-04-07

申请号：US14872775

申请日：2015-10-01

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

Abstract translation: 描述了使用氨基硅烷化合物作为硅前体在晶片表面上沉积SiO 2膜的工艺。

公开(公告)号：US20240360561A1

公开(公告)日：2024-10-31

申请号：US18765688

申请日：2024-07-08

Applicant: Applied Materials, Inc.

Inventor： Zohreh Razavi Hesabi ,  Cong Trinh ,  Kevin Griffin ,  Alexander V. Garachtchenko ,  Kenric Choi ,  Vipin Jose ,  Saloni Sawalkar ,  Maribel Maldonado-Garcia ,  Kendrick H. Chaney

IPC: C23C16/52 ,  C23C16/455 ,  G01F23/00 ,  G05D9/12 ,  H01L21/66 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/45544 ,  G01F23/0007 ,  G05D9/12 ,  H01L21/67253 ,  H01L22/10

Abstract: An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

公开(公告)号：US11658025B2

公开(公告)日：2023-05-23

申请号：US17151240

申请日：2021-01-18

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/02211 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20220282379A1

公开(公告)日：2022-09-08

申请号：US17189963

申请日：2021-03-02

Applicant: Applied Materials, Inc.

Inventor： Zohreh Razavi Hesabi ,  Cong Trinh ,  Kevin Griffin ,  Alexander V. Garachtchenko ,  Kenric Choi ,  Vipin Jose ,  Saloni Sawalkar ,  Maribel Maldonado-Garcia ,  Kendrick H. Chaney

IPC: C23C16/52 ,  C23C16/455 ,  H01L21/67 ,  H01L21/66

Abstract: An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

公开(公告)号：US11800824B2

公开(公告)日：2023-10-24

申请号：US17210657

申请日：2021-03-24

Applicant: Applied Materials, Inc.

Inventor： Maribel Maldonado-Garcia ,  Cong Trinh ,  Mihaela A. Balseanu

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/801 ,  H10N70/011 ,  H10N70/231

Abstract: Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.