SYSTEM AND PROCESS FOR IN SITU BYPRODUCT REMOVAL AND PLATEN COOLING DURING CMP
    1.
    发明申请
    SYSTEM AND PROCESS FOR IN SITU BYPRODUCT REMOVAL AND PLATEN COOLING DURING CMP 审中-公开
    在CMP期间通过产品移除和板式冷却的系统和方法

    公开(公告)号:US20160167195A1

    公开(公告)日:2016-06-16

    申请号:US14919406

    申请日:2015-10-21

    Abstract: Polishing pad cleaning systems and related methods are disclosed. A rotatable platen comprising a polishing pad in combination with a fluid, such as a polishing fluid, contacts a substrate to planarize material at the surface thereof and resultantly creates debris. A cleaning system introduces a spray system to remove debris from the polishing pad to prevent substrate damage and improve efficiency, a waste removal system for removing used spray, used polishing fluid, and debris from the polishing pad, and a polishing fluid delivery system for providing fresh polishing fluid to the polishing pad, such that the substrate only receives fresh polishing fluid upon each complete rotation of the platen. In this manner, within die performance is enhanced, the range of certain CMP processes is improved, scratches and contamination are avoided for each polished substrate and for later-polished substrates, and platen temperatures are reduced.

    Abstract translation: 公开了抛光垫清洁系统及相关方法。 包括与流体(例如抛光流体)组合的抛光垫的可旋转压板接触基底以在其表面平坦化材料并且导致碎屑。 清洁系统引入喷射系统以从抛光垫去除碎屑以防止基材损坏并提高效率,用于从抛光垫移除用过的喷雾,使用的抛光液和碎屑的废物去除系统以及用于提供 新鲜的抛光流体到抛光垫,使得基板在每个压板的完全旋转时仅接收新鲜的抛光液。 以这种方式,在模具性能提高的同时,某些CMP工艺的范围得到改善,避免了每个抛光衬底和后抛光衬底的划伤和污染,并降低了压板温度。

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