Abstract:
A polishing system is provided, including a carrier with an offset distance. The offset distance allows a shifted carrier head to cover more surface area of the polishing surface. The offset distance effectively provides an additional rotation of the carrier head about the axis, which allows for a greater area traversed on the polishing surface, improving chemical mechanical polishing uniformity on the substrate.
Abstract:
Polishing pad cleaning systems employing fluid outlets orientated to direct fluid under spray bodies and towards inlet ports, and related methods are disclosed. A polishing pad in combination with slurry contacts a substrate to planarize a surface of the substrate and remove substrate defects while creating debris. A spray system removes the debris from the polishing pad to prevent substrate damage and improve efficiency. By directing fluid under a spray body to the polishing pad and towards an inlet port, the debris may be entrained in the fluid and directed to an inner plenum of the spray body. The fluid-entrained debris is subsequently removed from the inner plenum through an outlet port. In this manner, the debris removal may reduce substrate defects, improve facility cleanliness, and improve pad efficiency.
Abstract:
Polishing pad cleaning systems and related methods are disclosed. A rotatable platen comprising a polishing pad in combination with a fluid, such as a polishing fluid, contacts a substrate to planarize material at the surface thereof and resultantly creates debris. A cleaning system introduces a spray system to remove debris from the polishing pad to prevent substrate damage and improve efficiency, a waste removal system for removing used spray, used polishing fluid, and debris from the polishing pad, and a polishing fluid delivery system for providing fresh polishing fluid to the polishing pad, such that the substrate only receives fresh polishing fluid upon each complete rotation of the platen. In this manner, within die performance is enhanced, the range of certain CMP processes is improved, scratches and contamination are avoided for each polished substrate and for later-polished substrates, and platen temperatures are reduced.
Abstract:
Embodiments of the present disclosure generally relate to methods of manufacturing polishing platens for use on a chemical mechanical polishing (CMP) system and polishing platens formed therefrom. A method of manufacturing a polishing includes positioning a polishing platen on a support of a manufacturing system. The manufacturing system includes the support and a cutting tool facing there towards. Here, the polishing platen includes a cylindrical metal body having a polymer layer disposed on a surface thereof and the polymer layer has a thickness of about 100 μm or more. The method further includes removing at least a portion of the polymer layer using the cutting tool to form a polishing pad-mounting surface. Beneficially, the method may be used to form a pad-mounting surface having a desired flatness or shape, such as a concave or convex shape.
Abstract:
Vacuum cleaning systems and related methods are disclosed. A polishing pad in combination with a fluid, such as a slurry, contacts a substrate to planarize material at the surface thereof and resultantly creates debris. A cleaning system includes an enclosure body having an inlet opening which may be placed proximate to the polishing pad and an exit opening in communication with a vacuum source to remove the debris and the fluid from the polishing pad through a passageway connecting the inlet and exit openings. By including contact members secured to the enclosure body and configured to form an abutment against a working surface of the polishing pad, a Venturi effect zone between the enclosure body and the working surface of the polishing pad may be created to dislodge fluid and debris from the working surface. In this manner, scratches and contamination are avoided for later-polished substrates.