公开(公告)号：US20040018742A1

公开(公告)日：2004-01-29

申请号：US10379980

申请日：2003-03-04

Applicant: Applied Materials, Inc.

Inventor： Jim Zhongyi He ,  Meihua Shen ,  Hong Du ,  Scott M. Williams

IPC: H01L021/302 ,  H01L021/461

CPC classification number: G03F7/405 ,  G03F7/094 ,  G03F7/427 ,  H01L21/0274 ,  H01L21/31138

Abstract: The present invention includes a method for patterning a bilayer resist having a patterned upper resist layer over a lower resist layer formed on a substrate. In one embodiment of the present invention, the method includes an optional upper resist layer trimming step, an upper resist layer treatment step, and a lower resist layer etching step. In the upper resist layer trimming step, the upper resist layer is trimmed in a plasma of a first process gas. In the upper resist layer treatment step, the upper resist layer is treated in a plasma of a second process gas to increase its etch resistance during the subsequent lower resist layer etching step. In the lower resist etching step, the lower resist layer is etched in a plasma of a third process gas, using the upper resist layer as a mask.

Abstract translation: 本发明包括在形成在基板上的下抗蚀剂层上形成图案化的上抗蚀剂层的双层抗蚀剂图案化方法。 在本发明的一个实施例中，该方法包括可选的上抗蚀剂层修整步骤，上抗蚀剂层处理步骤和下抗蚀剂层蚀刻步骤。 在上抗蚀剂层修整步骤中，在第一工艺气体的等离子体中修整上抗蚀剂层。 在上抗蚀剂层处理步骤中，在第二处理气体的等离子体中处理上抗蚀剂层，以在随后的较低抗蚀剂层蚀刻步骤期间增加其耐蚀刻性。 在较低抗蚀剂蚀刻步骤中，使用上抗蚀剂层作为掩模，在第三处理气体的等离子体中蚀刻下抗蚀剂层。