公开(公告)号：US20250038137A1

公开(公告)日：2025-01-30

申请号：US18225286

申请日：2023-07-24

Applicant: Applied Materials, Inc.

Inventor： Prayudi LIANTO ,  Marvin Louis BERNT ,  Tapash CHAKRABORTY ,  Yin Wei LIM ,  Jing XU

IPC: H01L23/00

Abstract: A method for depositing copper onto a substrate includes grain engineering to control the internal structure of the copper. In some embodiments, the method comprises depositing a grain control layer conformally onto a copper seed layer in a structure on the substrate where the grain control layer is a non-conducting material, etching the grain control layer using a direct deep reactive ion etch (DRIE) process to remove portions of the grain control layer on horizontal surfaces within the structure, and depositing a copper material onto the structure such that at least one grain parameter of the copper material is controlled, at least in part, by a remaining portion of the grain control layer on vertical surfaces of the structure. In some embodiments, the deposited copper material in the structure has a grain orientation normal to a horizontal surface of the structure.